Ferroelectric and piezoelectric properties of Aurivillius phase intergrowth ferroelectrics and the underlying materials design

Z. G. Yi; Y. X. Li; Y. Liu

doi:10.1002/pssa.201000077

Ferroelectric and piezoelectric properties of Aurivillius phase intergrowth ferroelectrics and the underlying materials design

Z. G. Yi, Y. X. Li, Y. Liu

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12 Citations (Scopus)

Abstract

Ferroelectric and piezoelectric properties of the La-doped intergrowth Aurivillius phase ceramics Bi _5-xLa _xTiNbWO ₁₅ and Bi _7-xLa _xTi ₄NbO ₂₁ (x = 0.00-1.75) were studied. It was found that the La doping is in favour of the domain switching. Owing to the impact of defects, the P-E hysteresis loops of the La-doped Bi ₅TiNbWO ₁₅ ceramics are un-symmetrical and the piezoelectric coefficients are quite low. Enhanced ferro-/piezoelectric properties, such as 2P _r of 24.4 μC/cm ² (x = 0.50) and d ₃₃ of 16.6 pC/N (x = 0.75), were obtained in the Bi _7-xLa _xTi ₄NbO ₂₁ ceramics. The high temperature electrical behaviour indicates that the Bi _5-xLa _xTiNbWO ₁₅ ceramics are semiconducting whereas the La-doped Bi ₇Ti ₄NbO ₂₁ ceramics are worthy to be further studied toward high temperature piezoelectric applications. Finally, the underlying materials design is discussed.

Original language	English
Pages (from-to)	1035-1040
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	208
Issue number	5
DOIs	https://doi.org/10.1002/pssa.201000077
Publication status	Published - May 2011

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title = "Ferroelectric and piezoelectric properties of Aurivillius phase intergrowth ferroelectrics and the underlying materials design",

abstract = "Ferroelectric and piezoelectric properties of the La-doped intergrowth Aurivillius phase ceramics Bi 5-xLa xTiNbWO 15 and Bi 7-xLa xTi 4NbO 21 (x = 0.00-1.75) were studied. It was found that the La doping is in favour of the domain switching. Owing to the impact of defects, the P-E hysteresis loops of the La-doped Bi 5TiNbWO 15 ceramics are un-symmetrical and the piezoelectric coefficients are quite low. Enhanced ferro-/piezoelectric properties, such as 2P r of 24.4 μC/cm 2 (x = 0.50) and d 33 of 16.6 pC/N (x = 0.75), were obtained in the Bi 7-xLa xTi 4NbO 21 ceramics. The high temperature electrical behaviour indicates that the Bi 5-xLa xTiNbWO 15 ceramics are semiconducting whereas the La-doped Bi 7Ti 4NbO 21 ceramics are worthy to be further studied toward high temperature piezoelectric applications. Finally, the underlying materials design is discussed.",

keywords = "Aurivillius phase, dielectric, ferroelectric, impedance, intergrowth",

author = "Yi, {Z. G.} and Li, {Y. X.} and Y. Liu",

year = "2011",

month = may,

doi = "10.1002/pssa.201000077",

language = "English",

volume = "208",

pages = "1035--1040",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "5",

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TY - JOUR

T1 - Ferroelectric and piezoelectric properties of Aurivillius phase intergrowth ferroelectrics and the underlying materials design

AU - Yi, Z. G.

AU - Li, Y. X.

AU - Liu, Y.

PY - 2011/5

Y1 - 2011/5

N2 - Ferroelectric and piezoelectric properties of the La-doped intergrowth Aurivillius phase ceramics Bi 5-xLa xTiNbWO 15 and Bi 7-xLa xTi 4NbO 21 (x = 0.00-1.75) were studied. It was found that the La doping is in favour of the domain switching. Owing to the impact of defects, the P-E hysteresis loops of the La-doped Bi 5TiNbWO 15 ceramics are un-symmetrical and the piezoelectric coefficients are quite low. Enhanced ferro-/piezoelectric properties, such as 2P r of 24.4 μC/cm 2 (x = 0.50) and d 33 of 16.6 pC/N (x = 0.75), were obtained in the Bi 7-xLa xTi 4NbO 21 ceramics. The high temperature electrical behaviour indicates that the Bi 5-xLa xTiNbWO 15 ceramics are semiconducting whereas the La-doped Bi 7Ti 4NbO 21 ceramics are worthy to be further studied toward high temperature piezoelectric applications. Finally, the underlying materials design is discussed.

AB - Ferroelectric and piezoelectric properties of the La-doped intergrowth Aurivillius phase ceramics Bi 5-xLa xTiNbWO 15 and Bi 7-xLa xTi 4NbO 21 (x = 0.00-1.75) were studied. It was found that the La doping is in favour of the domain switching. Owing to the impact of defects, the P-E hysteresis loops of the La-doped Bi 5TiNbWO 15 ceramics are un-symmetrical and the piezoelectric coefficients are quite low. Enhanced ferro-/piezoelectric properties, such as 2P r of 24.4 μC/cm 2 (x = 0.50) and d 33 of 16.6 pC/N (x = 0.75), were obtained in the Bi 7-xLa xTi 4NbO 21 ceramics. The high temperature electrical behaviour indicates that the Bi 5-xLa xTiNbWO 15 ceramics are semiconducting whereas the La-doped Bi 7Ti 4NbO 21 ceramics are worthy to be further studied toward high temperature piezoelectric applications. Finally, the underlying materials design is discussed.

KW - Aurivillius phase

KW - dielectric

KW - ferroelectric

KW - impedance

KW - intergrowth

UR - http://www.scopus.com/inward/record.url?scp=79955920729&partnerID=8YFLogxK

U2 - 10.1002/pssa.201000077

DO - 10.1002/pssa.201000077

M3 - Article

SN - 1862-6300

VL - 208

SP - 1035

EP - 1040

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 5

ER -

Ferroelectric and piezoelectric properties of Aurivillius phase intergrowth ferroelectrics and the underlying materials design

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