Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO 3 heterostructure

Zhongqiang Hu; Qian Li; Meiya Li; Qiangwen Wang; Yongdan Zhu; Xiaolian Liu; Xingzhong Zhao; Yun Liu; Shuxiang Dong

doi:10.1063/1.4795145

Ferroelectric memristor based on Pt/BiFeO₃/Nb-doped SrTiO ₃ heterostructure

Zhongqiang Hu, Qian Li, Meiya Li^*, Qiangwen Wang, Yongdan Zhu, Xiaolian Liu, Xingzhong Zhao, Yun Liu, Shuxiang Dong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

152 Citations (Scopus)

Abstract

We report a continuously tunable resistive switching behavior in Pt/BiFeO₃/Nb-doped SrTiO₃ heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 10⁵ by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO₃/Nb-doped SrTiO₃ interface.

Original language	English
Article number	102901
Journal	Applied Physics Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.4795145
Publication status	Published - 11 Mar 2013

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title = "Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO 3 heterostructure",

abstract = "We report a continuously tunable resistive switching behavior in Pt/BiFeO3/Nb-doped SrTiO3 heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 105 by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO3/Nb-doped SrTiO3 interface.",

author = "Zhongqiang Hu and Qian Li and Meiya Li and Qiangwen Wang and Yongdan Zhu and Xiaolian Liu and Xingzhong Zhao and Yun Liu and Shuxiang Dong",

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T1 - Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO 3 heterostructure

AU - Hu, Zhongqiang

AU - Li, Qian

AU - Li, Meiya

AU - Wang, Qiangwen

AU - Zhu, Yongdan

AU - Liu, Xiaolian

AU - Zhao, Xingzhong

AU - Liu, Yun

AU - Dong, Shuxiang

PY - 2013/3/11

Y1 - 2013/3/11

N2 - We report a continuously tunable resistive switching behavior in Pt/BiFeO3/Nb-doped SrTiO3 heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 105 by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO3/Nb-doped SrTiO3 interface.

AB - We report a continuously tunable resistive switching behavior in Pt/BiFeO3/Nb-doped SrTiO3 heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 105 by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO3/Nb-doped SrTiO3 interface.

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DO - 10.1063/1.4795145

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102901

ER -

Ferroelectric memristor based on Pt/BiFeO₃/Nb-doped SrTiO ₃ heterostructure

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