Ferromagnetic Ga1-xMnxAs produced by ion implantation and pulsed-laser melting

M. A. Scarpulla; O. D. Dubon; K. M. Yu; O. Monteiro; M. R. Pillai; M. J. Aziz; M. C. Ridgway

doi:10.1063/1.1555260

Ferromagnetic Ga_1-xMn_xAs produced by ion implantation and pulsed-laser melting

M. A. Scarpulla^*, O. D. Dubon, K. M. Yu, O. Monteiro, M. R. Pillai, M. J. Aziz, M. C. Ridgway

^*Corresponding author for this work

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Abstract

The formation of ferromagnetic Ga_1-xMn_xAs films were demonstrated by Mn ion implantation into GaAs followed by pulsed-laser melting. The remanent magnetization persisting above 85K was observed for samples with x≈0.10, in which 40% of the Mn resides on substitutional lattice sites. The ferromagnetism in Ga_1-xMn_xAs was found robust to the presence of structural defects.

Original language	English
Pages (from-to)	1251-1253
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	8
DOIs	https://doi.org/10.1063/1.1555260
Publication status	Published - 24 Feb 2003

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abstract = "The formation of ferromagnetic Ga1-xMnxAs films were demonstrated by Mn ion implantation into GaAs followed by pulsed-laser melting. The remanent magnetization persisting above 85K was observed for samples with x≈0.10, in which 40% of the Mn resides on substitutional lattice sites. The ferromagnetism in Ga1-xMnxAs was found robust to the presence of structural defects.",

author = "Scarpulla, {M. A.} and Dubon, {O. D.} and Yu, {K. M.} and O. Monteiro and Pillai, {M. R.} and Aziz, {M. J.} and Ridgway, {M. C.}",

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AU - Scarpulla, M. A.

AU - Dubon, O. D.

AU - Yu, K. M.

AU - Monteiro, O.

AU - Pillai, M. R.

AU - Aziz, M. J.

AU - Ridgway, M. C.

PY - 2003/2/24

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N2 - The formation of ferromagnetic Ga1-xMnxAs films were demonstrated by Mn ion implantation into GaAs followed by pulsed-laser melting. The remanent magnetization persisting above 85K was observed for samples with x≈0.10, in which 40% of the Mn resides on substitutional lattice sites. The ferromagnetism in Ga1-xMnxAs was found robust to the presence of structural defects.

AB - The formation of ferromagnetic Ga1-xMnxAs films were demonstrated by Mn ion implantation into GaAs followed by pulsed-laser melting. The remanent magnetization persisting above 85K was observed for samples with x≈0.10, in which 40% of the Mn resides on substitutional lattice sites. The ferromagnetism in Ga1-xMnxAs was found robust to the presence of structural defects.

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U2 - 10.1063/1.1555260

DO - 10.1063/1.1555260

M3 - Article

SN - 0003-6951

VL - 82

SP - 1251

EP - 1253

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Ferromagnetic Ga_1-xMn_xAs produced by ion implantation and pulsed-laser melting

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