Fine structure due to donor-acceptor pair luminescence in compensated Si

Michio Tajima; Takaaki Iwai; Hiroyuki Toyota; Simona Binetti; Daniel MacDonald

doi:10.1143/APEX.3.071301

Fine structure due to donor-acceptor pair luminescence in compensated Si

Michio Tajima^*, Takaaki Iwai, Hiroyuki Toyota, Simona Binetti, Daniel MacDonald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A fine structure on the higher energy side of donor-acceptor (DA) pair luminescence at 4.2K has been analyzed in compensated Si involving P donors and B acceptors. We calculated the density distribution of DA pairs against photon energy from the number of pairs as a function of the transition energy of respective pairs. A close agreement was obtained between the density curve and the observed spectral structure using the generally accepted values of energy gap and P donor and B acceptor ionization energies. This allows us to conclude that the structure is due to discrete DA pair recombination.

Original language	English
Article number	071301
Journal	Applied Physics Express
Volume	3
Issue number	7
DOIs	https://doi.org/10.1143/APEX.3.071301
Publication status	Published - Jul 2010

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title = "Fine structure due to donor-acceptor pair luminescence in compensated Si",

abstract = "A fine structure on the higher energy side of donor-acceptor (DA) pair luminescence at 4.2K has been analyzed in compensated Si involving P donors and B acceptors. We calculated the density distribution of DA pairs against photon energy from the number of pairs as a function of the transition energy of respective pairs. A close agreement was obtained between the density curve and the observed spectral structure using the generally accepted values of energy gap and P donor and B acceptor ionization energies. This allows us to conclude that the structure is due to discrete DA pair recombination.",

author = "Michio Tajima and Takaaki Iwai and Hiroyuki Toyota and Simona Binetti and Daniel MacDonald",

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T1 - Fine structure due to donor-acceptor pair luminescence in compensated Si

AU - Tajima, Michio

AU - Iwai, Takaaki

AU - Toyota, Hiroyuki

AU - Binetti, Simona

AU - MacDonald, Daniel

PY - 2010/7

Y1 - 2010/7

N2 - A fine structure on the higher energy side of donor-acceptor (DA) pair luminescence at 4.2K has been analyzed in compensated Si involving P donors and B acceptors. We calculated the density distribution of DA pairs against photon energy from the number of pairs as a function of the transition energy of respective pairs. A close agreement was obtained between the density curve and the observed spectral structure using the generally accepted values of energy gap and P donor and B acceptor ionization energies. This allows us to conclude that the structure is due to discrete DA pair recombination.

AB - A fine structure on the higher energy side of donor-acceptor (DA) pair luminescence at 4.2K has been analyzed in compensated Si involving P donors and B acceptors. We calculated the density distribution of DA pairs against photon energy from the number of pairs as a function of the transition energy of respective pairs. A close agreement was obtained between the density curve and the observed spectral structure using the generally accepted values of energy gap and P donor and B acceptor ionization energies. This allows us to conclude that the structure is due to discrete DA pair recombination.

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U2 - 10.1143/APEX.3.071301

DO - 10.1143/APEX.3.071301

M3 - Article

SN - 1882-0778

VL - 3

JO - Applied Physics Express

JF - Applied Physics Express

IS - 7

M1 - 071301

ER -

Fine structure due to donor-acceptor pair luminescence in compensated Si

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