Finite element modeling of resistive switching in Nb2O5-based memory device

Xinjun Liu; Sanjoy Kumar Nandi; Dinesh Kumar Venkatachalam; Shuai Li; Kidane Belay; Robert Glen Elliman

doi:10.1109/COMMAD.2014.7038711

Finite element modeling of resistive switching in Nb₂O₅-based memory device

Xinjun Liu, Sanjoy Kumar Nandi, Dinesh Kumar Venkatachalam, Shuai Li, Kidane Belay, Robert Glen Elliman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Citations (Scopus)

Abstract

A physical electro-thermal model that describes bipolar resistance switching in Nb₂O₅-based memory devices is presented based on the finite element method. The switching mechanism is assumed to be controlled by the diffusion and drift of oxygen vacancies in conductive filaments (CFs). The proposed model correctly describes the microscopic morphology of the CF during the gradual reset transition, which provides an in-depth understanding of the operation mechanism in resistive-switching memory devices.

Original language	English
Title of host publication	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Editors	Mariusz Martyniuk, Lorenzo Faraone
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	280-282
Number of pages	3
ISBN (Electronic)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038711
Publication status	Published - 10 Feb 2014
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Publication series

Name	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Conference

Conference	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

Access to Document

10.1109/COMMAD.2014.7038711

Cite this

Liu, X., Nandi, S. K., Venkatachalam, D. K., Li, S., Belay, K., & Elliman, R. G. (2014). Finite element modeling of resistive switching in Nb₂O₅-based memory device. In M. Martyniuk, & L. Faraone (Eds.), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 (pp. 280-282). Article 7038711 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2014.7038711

Liu, Xinjun ; Nandi, Sanjoy Kumar ; Venkatachalam, Dinesh Kumar et al. / Finite element modeling of resistive switching in Nb₂O₅-based memory device. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. editor / Mariusz Martyniuk ; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 280-282 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

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title = "Finite element modeling of resistive switching in Nb2O5-based memory device",

abstract = "A physical electro-thermal model that describes bipolar resistance switching in Nb2O5-based memory devices is presented based on the finite element method. The switching mechanism is assumed to be controlled by the diffusion and drift of oxygen vacancies in conductive filaments (CFs). The proposed model correctly describes the microscopic morphology of the CF during the gradual reset transition, which provides an in-depth understanding of the operation mechanism in resistive-switching memory devices.",

keywords = "Non-volatile memory, memory modeling, niobium oxide, resistive switching memory (ReRAM)",

author = "Xinjun Liu and Nandi, {Sanjoy Kumar} and Venkatachalam, {Dinesh Kumar} and Shuai Li and Kidane Belay and Elliman, {Robert Glen}",

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Liu, X, Nandi, SK, Venkatachalam, DK, Li, S, Belay, K & Elliman, RG 2014, Finite element modeling of resistive switching in Nb₂O₅-based memory device. in M Martyniuk & L Faraone (eds), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014., 7038711, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Institute of Electrical and Electronics Engineers Inc., pp. 280-282, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038711

Finite element modeling of resistive switching in Nb₂O₅-based memory device. / Liu, Xinjun; Nandi, Sanjoy Kumar; Venkatachalam, Dinesh Kumar et al.
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. ed. / Mariusz Martyniuk; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. p. 280-282 7038711 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - A physical electro-thermal model that describes bipolar resistance switching in Nb2O5-based memory devices is presented based on the finite element method. The switching mechanism is assumed to be controlled by the diffusion and drift of oxygen vacancies in conductive filaments (CFs). The proposed model correctly describes the microscopic morphology of the CF during the gradual reset transition, which provides an in-depth understanding of the operation mechanism in resistive-switching memory devices.

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Liu X, Nandi SK, Venkatachalam DK, Li S, Belay K, Elliman RG. Finite element modeling of resistive switching in Nb₂O₅-based memory device. In Martyniuk M, Faraone L, editors, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 280-282. 7038711. (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). doi: 10.1109/COMMAD.2014.7038711