Finite element modeling of resistive switching in Nb2O5-based memory device

Xinjun Liu, Sanjoy Kumar Nandi, Dinesh Kumar Venkatachalam, Shuai Li, Kidane Belay, Robert Glen Elliman

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Citations (Scopus)

    Abstract

    A physical electro-thermal model that describes bipolar resistance switching in Nb2O5-based memory devices is presented based on the finite element method. The switching mechanism is assumed to be controlled by the diffusion and drift of oxygen vacancies in conductive filaments (CFs). The proposed model correctly describes the microscopic morphology of the CF during the gradual reset transition, which provides an in-depth understanding of the operation mechanism in resistive-switching memory devices.

    Original languageEnglish
    Title of host publication2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
    EditorsMariusz Martyniuk, Lorenzo Faraone
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages280-282
    Number of pages3
    ISBN (Electronic)9781479968671
    DOIs
    Publication statusPublished - 10 Feb 2014
    Event2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia
    Duration: 14 Dec 201417 Dec 2014

    Publication series

    Name2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

    Conference

    Conference2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
    Country/TerritoryAustralia
    CityPerth
    Period14/12/1417/12/14

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