Abstract
Ab initio density functional calculations were performed to study the geometry and electronic structure of a prototypical zigzag AlN nanoribbon. We find that H-terminated zigzag 10-AlN nanoribbons have a non-direct band gap and are nonmagnetic. When a transverse electric field is applied, the band gap decreases monotonically with the strength of field E. Zigzag AlN nanoribbons with the N edge unpassivated display strong spin-polarization close to the Fermi level, which will result in spin-anisotropic transport. These results suggest potential applications for the development of AlN nanoribbon-based nanoelectronics applications.
Original language | English |
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Pages (from-to) | 183-185 |
Number of pages | 3 |
Journal | Chemical Physics Letters |
Volume | 469 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 3 Feb 2009 |