TY - JOUR
T1 - First-principles simulations of high-order harmonics generation in thin films of wide bandgap materials [Invited]
AU - Mathew, Albert
AU - Kruk, Sergey
AU - Yamada, Shunsuke
AU - Yabana, Kazuhiro
AU - Kheifets, Anatoli
N1 - Publisher Copyright:
© 2024 Optica Publishing Group.
PY - 2024/8
Y1 - 2024/8
N2 - High-order harmonics generation (HHG) is the only process that enables tabletop-sized sources of extreme ultraviolet (XUV) light. The HHG process typically involves light interactions with gases or plasma––material phases that hinder wider adoption of such sources. This motivates the research in HHG from nanostructured solids. Here, we employ the time-dependent density function theory (TDDFT) to investigate material platforms for HHG at the nanoscale using first-principles supercomputer simulations. We reveal that wide bandgap semiconductors, aluminum nitride (AlN) and silicon nitride (Si3N4), are highly promising for XUV light generation when compared to silicon, one of the most common nonlinear nanophotonic materials. In our calculations, we assume excitation with a 100 fs pulse duration, 1 × 1013 W/cm2 peak power, and 800 nm central wavelength. We demonstrate that in AlN material the interplay between the crystal symmetry and the incident light direction and polarization can enable the generation of both even and odd harmonics. Our results should advance the development of high-harmonics generation of XUV light from nanostructured solids.
AB - High-order harmonics generation (HHG) is the only process that enables tabletop-sized sources of extreme ultraviolet (XUV) light. The HHG process typically involves light interactions with gases or plasma––material phases that hinder wider adoption of such sources. This motivates the research in HHG from nanostructured solids. Here, we employ the time-dependent density function theory (TDDFT) to investigate material platforms for HHG at the nanoscale using first-principles supercomputer simulations. We reveal that wide bandgap semiconductors, aluminum nitride (AlN) and silicon nitride (Si3N4), are highly promising for XUV light generation when compared to silicon, one of the most common nonlinear nanophotonic materials. In our calculations, we assume excitation with a 100 fs pulse duration, 1 × 1013 W/cm2 peak power, and 800 nm central wavelength. We demonstrate that in AlN material the interplay between the crystal symmetry and the incident light direction and polarization can enable the generation of both even and odd harmonics. Our results should advance the development of high-harmonics generation of XUV light from nanostructured solids.
UR - http://www.scopus.com/inward/record.url?scp=85200340801&partnerID=8YFLogxK
U2 - 10.1364/JOSAB.512444
DO - 10.1364/JOSAB.512444
M3 - Article
AN - SCOPUS:85200340801
SN - 0740-3224
VL - 41
SP - 1665
EP - 1670
JO - Journal of the Optical Society of America B: Optical Physics
JF - Journal of the Optical Society of America B: Optical Physics
IS - 8
ER -