Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC

J. Slotte*, K. Saarinen, M. S. Janson, A. Hallén, A. Yu Kuznetsov, B. G. Svensson, J. Wong-Leung, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

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