Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in SiO 2 glasses

R. P. Wang*, N. Tai, K. Saito, A. J. Ikushima

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    18 Citations (Scopus)

    Abstract

    Fictive temperature (Tf) and fluorine (F)-doping concentration dependences of self-trapped holes (STHs) in silica glasses created by UV irradiation at low temperatures have been studied by the electron-paramagnetic-resonance method. It was found that the yield of STH decreases with decreasing Tf and increasing F-doping concentration. In combination with infrared spectra measurements, the correlation among Tf, F-doping concentration, Si-O bond length, and Si-O-Si bond angle was elucidated. We conclude that the change in both Tf and F doping can modify the network of Si O2 glass, leading to the suppression of the formation of STHs.

    Original languageEnglish
    Article number023701
    JournalJournal of Applied Physics
    Volume98
    Issue number2
    DOIs
    Publication statusPublished - 15 Jul 2005

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