Abstract
Fictive temperature (Tf) and fluorine (F)-doping concentration dependences of self-trapped holes (STHs) in silica glasses created by UV irradiation at low temperatures have been studied by the electron-paramagnetic-resonance method. It was found that the yield of STH decreases with decreasing Tf and increasing F-doping concentration. In combination with infrared spectra measurements, the correlation among Tf, F-doping concentration, Si-O bond length, and Si-O-Si bond angle was elucidated. We conclude that the change in both Tf and F doping can modify the network of Si O2 glass, leading to the suppression of the formation of STHs.
Original language | English |
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Article number | 023701 |
Journal | Journal of Applied Physics |
Volume | 98 |
Issue number | 2 |
DOIs | |
Publication status | Published - 15 Jul 2005 |