Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in SiO ₂ glasses

Fictive temperature (Tf) and fluorine (F)-doping concentration dependences of self-trapped holes (STHs) in silica glasses created by UV irradiation at low temperatures have been studied by the electron-paramagnetic-resonance method. It was found that the yield of STH decreases with decreasing Tf and increasing F-doping concentration. In combination with infrared spectra measurements, the correlation among Tf, F-doping concentration, Si-O bond length, and Si-O-Si bond angle was elucidated. We conclude that the change in both Tf and F doping can modify the network of Si O2 glass, leading to the suppression of the formation of STHs.