Formation and characterization of Ta2O5/TaO x films formed by O ion implantation

S. Ruffell; P. Kurunczi; J. England; Y. Erokhin; J. Hautala; R. G. Elliman

doi:10.1016/j.nimb.2012.11.092

Formation and characterization of Ta₂O₅/TaO _x films formed by O ion implantation

S. Ruffell, P. Kurunczi, J. England, Y. Erokhin, J. Hautala, R. G. Elliman^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Ta₂O₅/TaO_x (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (XTEM), four-point probe, and current- voltage and capacitance-voltage measurements. The measurements show that Ta ₂O₅/TaO_x oxide/ suboxide heterostructures can be fabricated with the relative thicknesses of the layers controlled by implantation energy and fluence. Electrical measurements show that this approach has promise for high volume manufacturing of resistive switching memory devices based on oxide/suboxide heterostructures.

Original language	English
Pages (from-to)	491-494
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	307
DOIs	https://doi.org/10.1016/j.nimb.2012.11.092
Publication status	Published - 2013

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10.1016/j.nimb.2012.11.092

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title = "Formation and characterization of Ta2O5/TaO x films formed by O ion implantation",

abstract = "Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (XTEM), four-point probe, and current- voltage and capacitance-voltage measurements. The measurements show that Ta 2O5/TaOx oxide/ suboxide heterostructures can be fabricated with the relative thicknesses of the layers controlled by implantation energy and fluence. Electrical measurements show that this approach has promise for high volume manufacturing of resistive switching memory devices based on oxide/suboxide heterostructures.",

keywords = "Ion-implantation, Nonvolatile memory, Resistive switching, Tantalum oxide",

author = "S. Ruffell and P. Kurunczi and J. England and Y. Erokhin and J. Hautala and Elliman, {R. G.}",

year = "2013",

doi = "10.1016/j.nimb.2012.11.092",

language = "English",

volume = "307",

pages = "491--494",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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TY - JOUR

T1 - Formation and characterization of Ta2O5/TaO x films formed by O ion implantation

AU - Ruffell, S.

AU - Kurunczi, P.

AU - England, J.

AU - Erokhin, Y.

AU - Hautala, J.

AU - Elliman, R. G.

PY - 2013

Y1 - 2013

N2 - Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (XTEM), four-point probe, and current- voltage and capacitance-voltage measurements. The measurements show that Ta 2O5/TaOx oxide/ suboxide heterostructures can be fabricated with the relative thicknesses of the layers controlled by implantation energy and fluence. Electrical measurements show that this approach has promise for high volume manufacturing of resistive switching memory devices based on oxide/suboxide heterostructures.

AB - Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (XTEM), four-point probe, and current- voltage and capacitance-voltage measurements. The measurements show that Ta 2O5/TaOx oxide/ suboxide heterostructures can be fabricated with the relative thicknesses of the layers controlled by implantation energy and fluence. Electrical measurements show that this approach has promise for high volume manufacturing of resistive switching memory devices based on oxide/suboxide heterostructures.

KW - Ion-implantation

KW - Nonvolatile memory

KW - Resistive switching

KW - Tantalum oxide

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DO - 10.1016/j.nimb.2012.11.092

M3 - Article

SN - 0168-583X

VL - 307

SP - 491

EP - 494

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Formation and characterization of Ta₂O₅/TaO _x films formed by O ion implantation

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