Formation and electronic structure of germanium nanocrystals formed by ion beam synthesis

C. J. Glover; M. C. Ridgway; D. J. Llewellyn; P. Kluth; B. Johanessen

doi:10.1016/j.nimb.2005.06.218

Formation and electronic structure of germanium nanocrystals formed by ion beam synthesis

C. J. Glover^*, M. C. Ridgway, D. J. Llewellyn, P. Kluth, B. Johanessen

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Germanium nanocrystals embedded in SiO₂ have been formed by ion implantation and subsequent thermal annealing. Ge⁷⁴ ions were implanted utilising ion energy/dose combinations to yield a uniform Ge excess of ∼5 at.% over the implanted layer. Subsequent thermal annealing at 1000 °C in a 95% N₂ + 5% H₂ ambient for as little as 10 s was sufficient to form nanocrystals approximately 2 nm in diameter. Size distributions corresponding to differing annealing times were determined by TEM, with longer annealing times leading to the formation of larger nanocrystals. The electronic structure of the nanocrystal was studied by XAS at the Ge L ₃ edge, and shifts of the absorption edge position to higher energies with increasing nanocrystal size were observed. We discuss the latter in relation to quantum confinement effects.

Original language	English
Pages (from-to)	306-309
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	238
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2005.06.218
Publication status	Published - Aug 2005
Event	Synchrotron Radiation in Materials Science Proceedings of the 4th Conference on Synchrotron Radiation in Materials Science - Duration: 23 Aug 2004 → 25 Aug 2004

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@article{390878cb60cb414b98882dfbadd9c496,

title = "Formation and electronic structure of germanium nanocrystals formed by ion beam synthesis",

abstract = "Germanium nanocrystals embedded in SiO2 have been formed by ion implantation and subsequent thermal annealing. Ge74 ions were implanted utilising ion energy/dose combinations to yield a uniform Ge excess of ∼5 at.% over the implanted layer. Subsequent thermal annealing at 1000 °C in a 95% N2 + 5% H2 ambient for as little as 10 s was sufficient to form nanocrystals approximately 2 nm in diameter. Size distributions corresponding to differing annealing times were determined by TEM, with longer annealing times leading to the formation of larger nanocrystals. The electronic structure of the nanocrystal was studied by XAS at the Ge L 3 edge, and shifts of the absorption edge position to higher energies with increasing nanocrystal size were observed. We discuss the latter in relation to quantum confinement effects.",

author = "Glover, {C. J.} and Ridgway, {M. C.} and Llewellyn, {D. J.} and P. Kluth and B. Johanessen",

year = "2005",

month = aug,

doi = "10.1016/j.nimb.2005.06.218",

language = "English",

volume = "238",

pages = "306--309",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Synchrotron Radiation in Materials Science Proceedings of the 4th Conference on Synchrotron Radiation in Materials Science ; Conference date: 23-08-2004 Through 25-08-2004",

}

Formation and electronic structure of germanium nanocrystals formed by ion beam synthesis. / Glover, C. J.; Ridgway, M. C.; Llewellyn, D. J. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 238, No. 1-4, 08.2005, p. 306-309.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Formation and electronic structure of germanium nanocrystals formed by ion beam synthesis

AU - Glover, C. J.

AU - Ridgway, M. C.

AU - Llewellyn, D. J.

AU - Kluth, P.

AU - Johanessen, B.

PY - 2005/8

Y1 - 2005/8

N2 - Germanium nanocrystals embedded in SiO2 have been formed by ion implantation and subsequent thermal annealing. Ge74 ions were implanted utilising ion energy/dose combinations to yield a uniform Ge excess of ∼5 at.% over the implanted layer. Subsequent thermal annealing at 1000 °C in a 95% N2 + 5% H2 ambient for as little as 10 s was sufficient to form nanocrystals approximately 2 nm in diameter. Size distributions corresponding to differing annealing times were determined by TEM, with longer annealing times leading to the formation of larger nanocrystals. The electronic structure of the nanocrystal was studied by XAS at the Ge L 3 edge, and shifts of the absorption edge position to higher energies with increasing nanocrystal size were observed. We discuss the latter in relation to quantum confinement effects.

AB - Germanium nanocrystals embedded in SiO2 have been formed by ion implantation and subsequent thermal annealing. Ge74 ions were implanted utilising ion energy/dose combinations to yield a uniform Ge excess of ∼5 at.% over the implanted layer. Subsequent thermal annealing at 1000 °C in a 95% N2 + 5% H2 ambient for as little as 10 s was sufficient to form nanocrystals approximately 2 nm in diameter. Size distributions corresponding to differing annealing times were determined by TEM, with longer annealing times leading to the formation of larger nanocrystals. The electronic structure of the nanocrystal was studied by XAS at the Ge L 3 edge, and shifts of the absorption edge position to higher energies with increasing nanocrystal size were observed. We discuss the latter in relation to quantum confinement effects.

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U2 - 10.1016/j.nimb.2005.06.218

DO - 10.1016/j.nimb.2005.06.218

M3 - Conference article

SN - 0168-583X

VL - 238

SP - 306

EP - 309

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

T2 - Synchrotron Radiation in Materials Science Proceedings of the 4th Conference on Synchrotron Radiation in Materials Science

Y2 - 23 August 2004 through 25 August 2004

ER -

Formation and electronic structure of germanium nanocrystals formed by ion beam synthesis

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