Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon

S. Ruffell*, J. E. Bradby, J. S. Williams, P. Munroe

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    73 Citations (Scopus)

    Abstract

    Nanoindentation-induced formation of high pressure crystalline phases (Si-III and Si-XII) during unloading has been studied by Raman micro-spectroscopy, cross-sectional transmission electron microscopy (XTEM), and postindentation electrical measurements. For indentation in crystalline silicon (c-Si), rapid unloading (∼1000 mNs) results in the formation of amorphous silicon (a-Si) only; a result we have exploited to quench the formation of high pressure phases at various stages during unloading to study their formation and evolution. This reveals that seed volumes of Si-III and Si-XII form during the early stages of unloading with substantial volumes only forming after the pop-out event that occurs at about 50% of the maximum load. In contrast, high pressure phases form much more readily in an a-Si matrix, with substantial volumes forming without an observable pop-out event with rapid unloading. Postindentation electrical measurements have been used to further investigate the end phases and to identify differences between indentations which otherwise appear to be identical from the XTEM and Raman analyses.

    Original languageEnglish
    Article number063521
    JournalJournal of Applied Physics
    Volume102
    Issue number6
    DOIs
    Publication statusPublished - 2007

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