Abstract
The rhombohedral phase of Si (r8-Si), a promising semiconducting material, is formed by indentation together with the body-centered cubic phase (bc8-Si). Using a novel sample preparation method, x-ray diffraction is used to determine the relative volume of these phases in indented Si and allow observation of a distorted unit cell along the direction of indentation loading. Theoretical calculations together with these observations suggest the indent contains an intrinsic compression of ∼4 GPa that stabilizes the r8 phase.
Original language | English |
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Article number | 105701 |
Journal | Physical Review Letters |
Volume | 122 |
Issue number | 10 |
DOIs | |
Publication status | Published - 11 Mar 2019 |