Formation of an r8-Dominant Si Material

S. Wong, B. Haberl, B. C. Johnson, A. Mujica, M. Guthrie, J. C. McCallum, J. S. Williams, J. E. Bradby

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    26 Citations (Scopus)

    Abstract

    The rhombohedral phase of Si (r8-Si), a promising semiconducting material, is formed by indentation together with the body-centered cubic phase (bc8-Si). Using a novel sample preparation method, x-ray diffraction is used to determine the relative volume of these phases in indented Si and allow observation of a distorted unit cell along the direction of indentation loading. Theoretical calculations together with these observations suggest the indent contains an intrinsic compression of ∼4 GPa that stabilizes the r8 phase.

    Original languageEnglish
    Article number105701
    JournalPhysical Review Letters
    Volume122
    Issue number10
    DOIs
    Publication statusPublished - 11 Mar 2019

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