Formation of an r8-Dominant Si Material

S. Wong; B. Haberl; B. C. Johnson; A. Mujica; M. Guthrie; J. C. McCallum; J. S. Williams; J. E. Bradby

doi:10.1103/PhysRevLett.122.105701

Formation of an r8-Dominant Si Material

S. Wong, B. Haberl, B. C. Johnson, A. Mujica, M. Guthrie, J. C. McCallum, J. S. Williams, J. E. Bradby

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The rhombohedral phase of Si (r8-Si), a promising semiconducting material, is formed by indentation together with the body-centered cubic phase (bc8-Si). Using a novel sample preparation method, x-ray diffraction is used to determine the relative volume of these phases in indented Si and allow observation of a distorted unit cell along the direction of indentation loading. Theoretical calculations together with these observations suggest the indent contains an intrinsic compression of ∼4 GPa that stabilizes the r8 phase.

Original language	English
Article number	105701
Journal	Physical Review Letters
Volume	122
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevLett.122.105701
Publication status	Published - 11 Mar 2019

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10.1103/PhysRevLett.122.105701

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title = "Formation of an r8-Dominant Si Material",

abstract = "The rhombohedral phase of Si (r8-Si), a promising semiconducting material, is formed by indentation together with the body-centered cubic phase (bc8-Si). Using a novel sample preparation method, x-ray diffraction is used to determine the relative volume of these phases in indented Si and allow observation of a distorted unit cell along the direction of indentation loading. Theoretical calculations together with these observations suggest the indent contains an intrinsic compression of ∼4 GPa that stabilizes the r8 phase.",

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AU - Johnson, B. C.

AU - Mujica, A.

AU - Guthrie, M.

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AU - Williams, J. S.

AU - Bradby, J. E.

PY - 2019/3/11

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AB - The rhombohedral phase of Si (r8-Si), a promising semiconducting material, is formed by indentation together with the body-centered cubic phase (bc8-Si). Using a novel sample preparation method, x-ray diffraction is used to determine the relative volume of these phases in indented Si and allow observation of a distorted unit cell along the direction of indentation loading. Theoretical calculations together with these observations suggest the indent contains an intrinsic compression of ∼4 GPa that stabilizes the r8 phase.

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Formation of an r8-Dominant Si Material

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