Formation of diluted III-V nitride thin films by N ion implantation

K. M. Yu; W. Walukiewicz; J. Wu; J. W. Beeman; J. W. Ager; E. E. Haller; W. Shan; H. P. Xin; C. W. Tu; M. C. Ridgway

doi:10.1063/1.1388860

Formation of diluted III-V nitride thin films by N ion implantation

K. M. Yu^*, W. Walukiewicz, J. Wu, J. W. Beeman, J. W. Ager, E. E. Haller, W. Shan, H. P. Xin, C. W. Tu, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

Diluted III-N_x-V_1-x alloys were successfully synthesized by nitrogen implantation into GaAs, InP, and Al_yGa_1-yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III-N_X-V_1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grown GaN_xAs_1-x and InN_xP_1-x alloys. In GaN_xAs_1-x the highest value of x (fraction of "active" substitutional N on As sublattice) achieved was 0.006. It was observed that N_As is thermally unstable at temperatures higher than 850°C. The highest value of x achieved in InN_xP_1-x was higher, 0.012, and the N_P was found to be stable to at least 850°C. In addition, the N activation efficiency in implanted InN_xP_1-x was at least a factor of 2 higher than that in GaN_xAs_1-x under similar processing conditions. Al_yGa_1-yN_xAs_1-x had not been made previously by epitaxial techniques. N implantation was successful in producing Al_yGa_1-yN_xAs_1-x alloys. Notably, the band gap of these alloys remains direct, even above the value of y (y>0.44) where the band gap of the host material is indirect.

Original language	English
Pages (from-to)	2227-2234
Number of pages	8
Journal	Journal of Applied Physics
Volume	90
Issue number	5
DOIs	https://doi.org/10.1063/1.1388860
Publication status	Published - 1 Sept 2001

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@article{2cbcc7e67ce943d1b2211674e0e575c8,

title = "Formation of diluted III-V nitride thin films by N ion implantation",

abstract = "Diluted III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation into GaAs, InP, and AlyGa1-yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III-NX-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grown GaNxAs1-x and InNxP1-x alloys. In GaNxAs1-x the highest value of x (fraction of {"}active{"} substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850°C. The highest value of x achieved in InNxP1-x was higher, 0.012, and the NP was found to be stable to at least 850°C. In addition, the N activation efficiency in implanted InNxP1-x was at least a factor of 2 higher than that in GaNxAs1-x under similar processing conditions. AlyGa1-yNxAs1-x had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1-yNxAs1-x alloys. Notably, the band gap of these alloys remains direct, even above the value of y (y>0.44) where the band gap of the host material is indirect.",

author = "Yu, {K. M.} and W. Walukiewicz and J. Wu and Beeman, {J. W.} and Ager, {J. W.} and Haller, {E. E.} and W. Shan and Xin, {H. P.} and Tu, {C. W.} and Ridgway, {M. C.}",

year = "2001",

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doi = "10.1063/1.1388860",

language = "English",

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T1 - Formation of diluted III-V nitride thin films by N ion implantation

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Wu, J.

AU - Beeman, J. W.

AU - Ager, J. W.

AU - Haller, E. E.

AU - Shan, W.

AU - Xin, H. P.

AU - Tu, C. W.

AU - Ridgway, M. C.

PY - 2001/9/1

Y1 - 2001/9/1

N2 - Diluted III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation into GaAs, InP, and AlyGa1-yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III-NX-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grown GaNxAs1-x and InNxP1-x alloys. In GaNxAs1-x the highest value of x (fraction of "active" substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850°C. The highest value of x achieved in InNxP1-x was higher, 0.012, and the NP was found to be stable to at least 850°C. In addition, the N activation efficiency in implanted InNxP1-x was at least a factor of 2 higher than that in GaNxAs1-x under similar processing conditions. AlyGa1-yNxAs1-x had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1-yNxAs1-x alloys. Notably, the band gap of these alloys remains direct, even above the value of y (y>0.44) where the band gap of the host material is indirect.

AB - Diluted III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation into GaAs, InP, and AlyGa1-yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III-NX-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grown GaNxAs1-x and InNxP1-x alloys. In GaNxAs1-x the highest value of x (fraction of "active" substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850°C. The highest value of x achieved in InNxP1-x was higher, 0.012, and the NP was found to be stable to at least 850°C. In addition, the N activation efficiency in implanted InNxP1-x was at least a factor of 2 higher than that in GaNxAs1-x under similar processing conditions. AlyGa1-yNxAs1-x had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1-yNxAs1-x alloys. Notably, the band gap of these alloys remains direct, even above the value of y (y>0.44) where the band gap of the host material is indirect.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Formation of diluted III-V nitride thin films by N ion implantation

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