Formation of Ge nanoparticles in SiOxNy by ion implantation and thermal annealing

S. Mirzaei*, F. Kremer, D. J. Sprouster, L. L. Araujo, R. Feng, C. J. Glover, M. C. Ridgway

*Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

    8 Citations (Scopus)

    Fingerprint

    Dive into the research topics of 'Formation of Ge nanoparticles in SiOxNy by ion implantation and thermal annealing'. Together they form a unique fingerprint.
    Sort by

    Material Science

    Engineering