Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures

Mohanchand Paladugu*, Jin Zou, Ya Nan Guo, Xin Zhang, Hannah J. Joyce, Qiang Gao, H. Hoe Tan, Chennupati Jagadish, Yong Kim

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    42 Citations (Scopus)

    Abstract

    (Figure Presented) Rings around the wire: Novel hierarchical heterostructures, assembled by radial deposition of InAs on GaAs nanowires with nonplanar side walls, result in the formation of InAs nanorings. The mechanism of formation of such structures, determined by transmission electron microscopy, involves the preferential nucleation of InAs at concave regions of the GaAs surface by capillarity effects.

    Original languageEnglish
    Pages (from-to)780-783
    Number of pages4
    JournalAngewandte Chemie - International Edition
    Volume48
    Issue number4
    DOIs
    Publication statusPublished - 12 Jan 2009

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