Formation of intermediate band in ZnTe: O highly mismatched alloy synthesized by ion implantation

J. D. Ye, K. Zhen, S. L. Gu, F. Wang, H. H. Tan, C. Jagadish

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Citations (Scopus)

    Abstract

    ZnTe:O highly mismatched alloys have been produced by isoelectric oxygen implantation into ZnTe and the micro structural and optical properties of ZnTe:O materials have been investigated in detail. The proper dose of oxygen ions led to the formation of intermediate band located at the energy level of ∼0.45eV below the conduction band while high dose of oxygen ions caused an amorphous ZnTe surface layer and enhanced the deep level emission around 1.6eV. The results suggest that the reduction of lattice disorder is needed to convert localized states of intermediate band into extended states, which is crucial to realize high efficiency ZnTe:O based intermediate band solar cells.

    Original languageEnglish
    Title of host publication2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
    EditorsMariusz Martyniuk, Lorenzo Faraone
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages259-261
    Number of pages3
    ISBN (Electronic)9781479968671
    DOIs
    Publication statusPublished - 10 Feb 2014
    Event2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia
    Duration: 14 Dec 201417 Dec 2014

    Publication series

    Name2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

    Conference

    Conference2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
    Country/TerritoryAustralia
    CityPerth
    Period14/12/1417/12/14

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