Formation of precipitates in heavily boron doped 4H-SiC

M. K. Linnarsson*, M. S. Janson, N. Nordell, J. Wong-Leung, A. Schöner

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    15 Citations (Scopus)

    Abstract

    Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 °C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B 4 C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 × 10 22 exp(-1.4 eV/k B T) cm -3 over the studied temperature range.

    Original languageEnglish
    Pages (from-to)5316-5320
    Number of pages5
    JournalApplied Surface Science
    Volume252
    Issue number15
    DOIs
    Publication statusPublished - 30 May 2006

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