Abstract
Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 °C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B 4 C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 × 10 22 exp(-1.4 eV/k B T) cm -3 over the studied temperature range.
Original language | English |
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Pages (from-to) | 5316-5320 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 252 |
Issue number | 15 |
DOIs | |
Publication status | Published - 30 May 2006 |