Formation of precipitates in heavily boron doped 4H-SiC

M. K. Linnarsson; M. S. Janson; N. Nordell; J. Wong-Leung; A. Schöner

doi:10.1016/j.apsusc.2005.12.024

Formation of precipitates in heavily boron doped 4H-SiC

M. K. Linnarsson^*, M. S. Janson, N. Nordell, J. Wong-Leung, A. Schöner

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (SciVal)

Abstract

Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 °C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B ₄ C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 × 10 ²² exp(-1.4 eV/k _B T) cm ^-3 over the studied temperature range.

Original language	English
Pages (from-to)	5316-5320
Number of pages	5
Journal	Applied Surface Science
Volume	252
Issue number	15
DOIs	https://doi.org/10.1016/j.apsusc.2005.12.024
Publication status	Published - 30 May 2006

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10.1016/j.apsusc.2005.12.024

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title = "Formation of precipitates in heavily boron doped 4H-SiC",

abstract = " Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 °C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B 4 C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 × 10 22 exp(-1.4 eV/k B T) cm -3 over the studied temperature range.",

keywords = "B, Precipitates, SIMS, SiC, Solubility limit, TEM",

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T1 - Formation of precipitates in heavily boron doped 4H-SiC

AU - Linnarsson, M. K.

AU - Janson, M. S.

AU - Nordell, N.

AU - Wong-Leung, J.

AU - Schöner, A.

PY - 2006/5/30

Y1 - 2006/5/30

N2 - Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 °C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B 4 C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 × 10 22 exp(-1.4 eV/k B T) cm -3 over the studied temperature range.

AB - Secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) are utilized to study precipitation and the solubility of B in 4H-SiC epitaxial layers super saturated with B. Heat treatments are performed in Ar atmosphere in an rf-heated furnace at temperatures between 1700 and 2000 °C. SIMS ion images, and TEM micrographs reveal the formation of two types of precipitates where the larger, more thermally stable one is suggested to be B 4 C. The boron solubility is determined from SIMS depth profiles and is shown to follow the Arrhenius expression: 7.1 × 10 22 exp(-1.4 eV/k B T) cm -3 over the studied temperature range.

KW - B

KW - Precipitates

KW - SIMS

KW - SiC

KW - Solubility limit

KW - TEM

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DO - 10.1016/j.apsusc.2005.12.024

M3 - Article

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VL - 252

SP - 5316

EP - 5320

JO - Applied Surface Science

JF - Applied Surface Science

IS - 15

ER -

Formation of precipitates in heavily boron doped 4H-SiC

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