Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

Nicholas V. Proscia; Zav Shoton; Harishankar Jayakumar; Prithvi Reddy; Michael Dollar; Marcus Doherty; Audrius Alkauskas; Carlos A. Meriles; Vinod M. Menon

Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

Nicholas V. Proscia, Zav Shoton, Harishankar Jayakumar, Prithvi Reddy, Michael Dollar, Marcus Doherty, Audrius Alkauskas, Carlos A. Meriles, Vinod M. Menon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Room temperature quantum emitter arrays are created in hexagonal Boron Nitride (hBN) by deterministic activation via strain engineering on a nanopillar substrate. Emitters are localized at pillar edges where the hBN film undergoes maximum strain.

Original language	English
Title of host publication	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781943580422
Publication status	Published - 6 Aug 2018
Event	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - San Jose, United States Duration: 13 May 2018 → 18 May 2018

Publication series

Name	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

Conference

Conference	2018 Conference on Lasers and Electro-Optics, CLEO 2018
Country/Territory	United States
City	San Jose
Period	13/05/18 → 18/05/18

Cite this

Proscia, N. V., Shoton, Z., Jayakumar, H., Reddy, P., Dollar, M., Doherty, M., Alkauskas, A., Meriles, C. A., & Menon, V. M. (2018). Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature. In 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings Article 8426784 (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{abfc7dfb563145af97e5304223573121,

title = "Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature",

abstract = "Room temperature quantum emitter arrays are created in hexagonal Boron Nitride (hBN) by deterministic activation via strain engineering on a nanopillar substrate. Emitters are localized at pillar edges where the hBN film undergoes maximum strain.",

author = "Proscia, {Nicholas V.} and Zav Shoton and Harishankar Jayakumar and Prithvi Reddy and Michael Dollar and Marcus Doherty and Audrius Alkauskas and Meriles, {Carlos A.} and Menon, {Vinod M.}",

note = "Publisher Copyright: {\textcopyright} 2018 OSA.; 2018 Conference on Lasers and Electro-Optics, CLEO 2018 ; Conference date: 13-05-2018 Through 18-05-2018",

year = "2018",

month = aug,

day = "6",

language = "English",

isbn = "9781943580422",

series = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

address = "United States",

}

Proscia, NV, Shoton, Z, Jayakumar, H, Reddy, P, Dollar, M, Doherty, M, Alkauskas, A, Meriles, CA & Menon, VM 2018, Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature. in 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings., 8426784, 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2018 Conference on Lasers and Electro-Optics, CLEO 2018, San Jose, United States, 13/05/18.

Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature. / Proscia, Nicholas V.; Shoton, Zav; Jayakumar, Harishankar et al.
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 8426784 (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

AU - Proscia, Nicholas V.

AU - Shoton, Zav

AU - Jayakumar, Harishankar

AU - Reddy, Prithvi

AU - Dollar, Michael

AU - Doherty, Marcus

AU - Alkauskas, Audrius

AU - Meriles, Carlos A.

AU - Menon, Vinod M.

PY - 2018/8/6

Y1 - 2018/8/6

N2 - Room temperature quantum emitter arrays are created in hexagonal Boron Nitride (hBN) by deterministic activation via strain engineering on a nanopillar substrate. Emitters are localized at pillar edges where the hBN film undergoes maximum strain.

AB - Room temperature quantum emitter arrays are created in hexagonal Boron Nitride (hBN) by deterministic activation via strain engineering on a nanopillar substrate. Emitters are localized at pillar edges where the hBN film undergoes maximum strain.

UR - http://www.scopus.com/inward/record.url?scp=85052564317&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781943580422

T3 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

BT - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018

Y2 - 13 May 2018 through 18 May 2018

ER -

Proscia NV, Shoton Z, Jayakumar H, Reddy P, Dollar M, Doherty M et al. Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature. In 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8426784. (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings).

Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

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