Formation of Si or Ge nanodots in Si₃N₄ with in-situ donor modulation doping of adjacent barrier material

Conventional doping of small nanodots does not provide majority carriers due to self-purification effects and much increased ionisation energies of dopants presenting point defects. Adjacent barrier layers to Si-rich Si3N4 can be doped by excess Si in-situ with the segregation anneal for Si nanodot formation. Donor doping of AlxGa1-xN (0 <= x <= 1) with Si is an established process. Material properties and process compatibility of AlxGa1-xN render it suitable as barrier for Si nanodot superlattices. Ab-initio calculations showed that Ge also works as a donor in AlN, extending the material range to Ge and SiGe nanodots in Si3N4. Copyright 2013 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx. doi. org/10.1063/1.4789397]