Formation of site-controlled InAs/InP quantum dots and their integration into planar structures

H. Wang; J. Yuan; P. J. Van Veldhoven; P. Nouwens T. De Vries; E. Smalbrugge; E. J. Geluk; R. Notzel

doi:10.1109/COMMAD.2010.5699798

Formation of site-controlled InAs/InP quantum dots and their integration into planar structures

H. Wang^*, J. Yuan, P. J. Van Veldhoven, P. Nouwens T. De Vries, E. Smalbrugge, E. J. Geluk, R. Notzel

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report the formation of site-controlled InAs quantum dots (QDs) on InP pyramids and their integration into planar structures by metalorganic vapor-phase epitaxy. The QD number is reduced by the shrinking pyramid size during growth. Finally the emission from a single QD is observed at 1.55 μm, after optimization of the growth parameters. Employing regrowth epitaxy, position-controlled InAs QDs are integrated into planar InP structures. A smooth surface morphology is obtained at 640 °C during regrowth.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	93-94
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699798
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699798

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Wang, H., Yuan, J., Van Veldhoven, P. J., De Vries, P. N. T., Smalbrugge, E., Geluk, E. J., & Notzel, R. (2010). Formation of site-controlled InAs/InP quantum dots and their integration into planar structures. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 93-94). Article 5699798 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699798

@inproceedings{9b787a5cdddc4679876ed4979aa8db4c,

title = "Formation of site-controlled InAs/InP quantum dots and their integration into planar structures",

abstract = "We report the formation of site-controlled InAs quantum dots (QDs) on InP pyramids and their integration into planar structures by metalorganic vapor-phase epitaxy. The QD number is reduced by the shrinking pyramid size during growth. Finally the emission from a single QD is observed at 1.55 μm, after optimization of the growth parameters. Employing regrowth epitaxy, position-controlled InAs QDs are integrated into planar InP structures. A smooth surface morphology is obtained at 640 °C during regrowth.",

author = "H. Wang and J. Yuan and {Van Veldhoven}, {P. J.} and {De Vries}, {P. Nouwens T.} and E. Smalbrugge and Geluk, {E. J.} and R. Notzel",

year = "2010",

doi = "10.1109/COMMAD.2010.5699798",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "93--94",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Wang, H, Yuan, J, Van Veldhoven, PJ, De Vries, PNT, Smalbrugge, E, Geluk, EJ & Notzel, R 2010, Formation of site-controlled InAs/InP quantum dots and their integration into planar structures. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699798, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 93-94, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699798

Formation of site-controlled InAs/InP quantum dots and their integration into planar structures. / Wang, H.; Yuan, J.; Van Veldhoven, P. J. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 93-94 5699798 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Formation of site-controlled InAs/InP quantum dots and their integration into planar structures

AU - Wang, H.

AU - Yuan, J.

AU - Van Veldhoven, P. J.

AU - De Vries, P. Nouwens T.

AU - Smalbrugge, E.

AU - Geluk, E. J.

AU - Notzel, R.

PY - 2010

Y1 - 2010

N2 - We report the formation of site-controlled InAs quantum dots (QDs) on InP pyramids and their integration into planar structures by metalorganic vapor-phase epitaxy. The QD number is reduced by the shrinking pyramid size during growth. Finally the emission from a single QD is observed at 1.55 μm, after optimization of the growth parameters. Employing regrowth epitaxy, position-controlled InAs QDs are integrated into planar InP structures. A smooth surface morphology is obtained at 640 °C during regrowth.

AB - We report the formation of site-controlled InAs quantum dots (QDs) on InP pyramids and their integration into planar structures by metalorganic vapor-phase epitaxy. The QD number is reduced by the shrinking pyramid size during growth. Finally the emission from a single QD is observed at 1.55 μm, after optimization of the growth parameters. Employing regrowth epitaxy, position-controlled InAs QDs are integrated into planar InP structures. A smooth surface morphology is obtained at 640 °C during regrowth.

UR - http://www.scopus.com/inward/record.url?scp=79951735695&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2010.5699798

DO - 10.1109/COMMAD.2010.5699798

M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 93

EP - 94

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Wang H, Yuan J, Van Veldhoven PJ, De Vries PNT, Smalbrugge E, Geluk EJ et al. Formation of site-controlled InAs/InP quantum dots and their integration into planar structures. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 93-94. 5699798. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699798

Formation of site-controlled InAs/InP quantum dots and their integration into planar structures

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