Formation rates of iron-acceptor pairs in crystalline silicon

Daniel Macdonald*, Thomas Roth, Prakash N.K. Deenapanray, Karsten Bothe, Peter Pohl, Jan Schmidt

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    55 Citations (Scopus)


    The characteristic association time constant describing the formation of iron-acceptor pairs in crystalline silicon has been measured for samples of various p -type dopant concentrations and species (B, Ga, and In) near room temperature. The results show that the dopant species has no impact on the pairing kinetics, suggesting that the pairing process is entirely limited by iron diffusion. This conclusion was corroborated by measurement of the activation energy of pair formation, which coincides with the migration enthalpy of interstitial iron in silicon. The results also indicate that the pair-formation process occurs approximately twice as fast as predicted by a commonly used expression.

    Original languageEnglish
    Article number083509
    JournalJournal of Applied Physics
    Issue number8
    Publication statusPublished - 15 Oct 2005


    Dive into the research topics of 'Formation rates of iron-acceptor pairs in crystalline silicon'. Together they form a unique fingerprint.

    Cite this