Forming-free bipolar resistive switching and quantum conductance in NiO/FTO structures

Ling Wei; Shuai Li; Sanjoy Kumar Nandi; Robert Glen Elliman

doi:10.1088/1361-6463/ab3aa4

Forming-free bipolar resistive switching and quantum conductance in NiO/FTO structures

Ling Wei, Shuai Li, Sanjoy Kumar Nandi, Robert Glen Elliman^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Forming-free bipolar resistive switching and quantum conductance effects are reported for Au/NiO/FTO structures. The devices show multistep conductance changes during the RESET process for temperatures in the range from 295 to 373 K. Statistical histograms based on 650 switching cycles indicate that the conductivity changes are well represented by integer or half integer multiples of the quantum conductance G ₀. Temperature dependent I-V measurements below the switching voltages can be described using a Poole-Frenkel model. The mechanism of forming-free bipolar switching and the quantum conductance effect in the Au/NiO/FTO structure is interpreted by multiple quasi-filaments existing in as-grown NiO films and the numbers for the multiple conducting filaments decrease gradually in RESET processes when they rupture gradually.

Original language	English
Article number	465305
Journal	Journal Physics D: Applied Physics
Volume	52
Issue number	46
DOIs	https://doi.org/10.1088/1361-6463/ab3aa4
Publication status	Published - 4 Sept 2019

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title = "Forming-free bipolar resistive switching and quantum conductance in NiO/FTO structures",

abstract = "Forming-free bipolar resistive switching and quantum conductance effects are reported for Au/NiO/FTO structures. The devices show multistep conductance changes during the RESET process for temperatures in the range from 295 to 373 K. Statistical histograms based on 650 switching cycles indicate that the conductivity changes are well represented by integer or half integer multiples of the quantum conductance G 0. Temperature dependent I-V measurements below the switching voltages can be described using a Poole-Frenkel model. The mechanism of forming-free bipolar switching and the quantum conductance effect in the Au/NiO/FTO structure is interpreted by multiple quasi-filaments existing in as-grown NiO films and the numbers for the multiple conducting filaments decrease gradually in RESET processes when they rupture gradually.",

keywords = "NiO films, forming-free, quantum conductance, resistive switching",

author = "Ling Wei and Shuai Li and Nandi, {Sanjoy Kumar} and Elliman, {Robert Glen}",

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T1 - Forming-free bipolar resistive switching and quantum conductance in NiO/FTO structures

AU - Wei, Ling

AU - Li, Shuai

AU - Nandi, Sanjoy Kumar

AU - Elliman, Robert Glen

PY - 2019/9/4

Y1 - 2019/9/4

N2 - Forming-free bipolar resistive switching and quantum conductance effects are reported for Au/NiO/FTO structures. The devices show multistep conductance changes during the RESET process for temperatures in the range from 295 to 373 K. Statistical histograms based on 650 switching cycles indicate that the conductivity changes are well represented by integer or half integer multiples of the quantum conductance G 0. Temperature dependent I-V measurements below the switching voltages can be described using a Poole-Frenkel model. The mechanism of forming-free bipolar switching and the quantum conductance effect in the Au/NiO/FTO structure is interpreted by multiple quasi-filaments existing in as-grown NiO films and the numbers for the multiple conducting filaments decrease gradually in RESET processes when they rupture gradually.

AB - Forming-free bipolar resistive switching and quantum conductance effects are reported for Au/NiO/FTO structures. The devices show multistep conductance changes during the RESET process for temperatures in the range from 295 to 373 K. Statistical histograms based on 650 switching cycles indicate that the conductivity changes are well represented by integer or half integer multiples of the quantum conductance G 0. Temperature dependent I-V measurements below the switching voltages can be described using a Poole-Frenkel model. The mechanism of forming-free bipolar switching and the quantum conductance effect in the Au/NiO/FTO structure is interpreted by multiple quasi-filaments existing in as-grown NiO films and the numbers for the multiple conducting filaments decrease gradually in RESET processes when they rupture gradually.

KW - NiO films

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KW - quantum conductance

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U2 - 10.1088/1361-6463/ab3aa4

DO - 10.1088/1361-6463/ab3aa4

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JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

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ER -

Forming-free bipolar resistive switching and quantum conductance in NiO/FTO structures

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