Fully-inverted piezoresponse hysteresis loops mediated by charge injection in 0.29Pb (In1/2Nb1/2) O3 -0.44Pb (Mg 1/3Nb2/3) O3 -0.27 PbTiO3 single crystals

Qian Li*, Yun Liu, Jason Schiemer, Paul Smith, Zhenrong Li, Ray L. Withers, Zhuo Xu

*Corresponding author for this work

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    28 Citations (Scopus)

    Abstract

    The domain structure and local switching behavior of ternary relaxor (001) 0.29Pb (In1/2Nb1/2) O3 -0.44Pb (Mg 1/3Nb2/3) O3 -0.27 PbTiO3 single crystals are studied using piezoresponse force microscopy. The as-grown crystals exhibit a labyrinthine domain pattern similar to other relaxor-based ferroelectrics. Abnormally switched domains are observed for both positive and negative tip-voltages, with sign-dependent thresholds and growth rates on the poled crystals. Further piezoresponse hysteresis loop measurements show that fully inverted loops can be observed under high switching voltages, mediated by injected charge fields. The dynamic behavior of the observed abnormal switching is qualitatively analyzed and the underlying mechanisms discussed.

    Original languageEnglish
    Article number092908
    JournalApplied Physics Letters
    Volume98
    Issue number9
    DOIs
    Publication statusPublished - 28 Feb 2011

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