@inproceedings{e2ac4af7da834ca6ab598af02442ccb1,
title = "Fully planar ion-implanted 0.98 μm strained quantum well laser",
abstract = "GaAs-InGaAs quantum well laser structures were fabricated using a 5 MeV O+ implant (approximately 1015 cm-2 dose) to disorder the quantum well for optical isolation upon post-implant annealing. End-of-range disorder is placed in the underlying substrate, and consisted of small dislocation loops. Electrical isolation was provided by a subsequent multiple energy (40-300 keV) O+ implant scheme. Masking for both implant steps was obtained using a lift-off Au deposition. This fully planar process is considerably simpler than the Si diffusion process for quantum well disordering that is commonly employed for 0.98 μm laser fabrication. A discussion will be given of the relative advantages and disadvantages of the two processes, with particular emphasis on reliability issues.",
author = "Hobson, {W. S.} and Pearton, {S. J.} and F. Ren and Chu, {S. N.G.} and R. Bylsma and Elliman, {R. G.}",
year = "1993",
doi = "10.1557/proc-300-107",
language = "English",
isbn = "1558991964",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "107--113",
booktitle = "III-V Electronic and Photonic Device Fabrication and Performance",
note = "Materials Research Society Spring Meeting ; Conference date: 12-04-1993 Through 15-04-1993",
}