Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions

K. S.A. Butcher; Afifuddin; T. L. Tansley; N. Brack; P. J. Pigram; H. Timmers; K. E. Prince; R. G. Elliman

doi:10.1016/j.apsusc.2004.02.029

Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions

K. S.A. Butcher^*, Afifuddin, T. L. Tansley, N. Brack, P. J. Pigram, H. Timmers, K. E. Prince, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Metallic gallium was observed on the surfaces of GaN commercial samples following argon ion milling. SIMS measurements confirmed that the commercial GaN had approximately 0.02% bulk oxygen present. The SIMS signal was standardized using a specimen of known oxygen content, as determined by elastic recoil detection analysis using 200MeV heavy ions of ¹⁹⁷ Au. Despite this 2-5% oxygen was observed by XPS in the bulk of the GaN after the argon ion milling. This oxygen is believed to be from the original surface oxide that re-cycles on the GaN surface during the ion milling.

Original language	English
Pages (from-to)	18-23
Number of pages	6
Journal	Applied Surface Science
Volume	230
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.02.029
Publication status	Published - 31 May 2004

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@article{4c50eaa42c3e4b008868bd8fa2c7d461,

title = "Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions",

abstract = " Metallic gallium was observed on the surfaces of GaN commercial samples following argon ion milling. SIMS measurements confirmed that the commercial GaN had approximately 0.02\% bulk oxygen present. The SIMS signal was standardized using a specimen of known oxygen content, as determined by elastic recoil detection analysis using 200MeV heavy ions of 197 Au. Despite this 2-5\% oxygen was observed by XPS in the bulk of the GaN after the argon ion milling. This oxygen is believed to be from the original surface oxide that re-cycles on the GaN surface during the ion milling.",

keywords = "Argon ion milling, Gallium nitride, Ultra-high vacuum",

author = "Butcher, \{K. S.A.\} and Afifuddin and Tansley, \{T. L.\} and N. Brack and Pigram, \{P. J.\} and H. Timmers and Prince, \{K. E.\} and Elliman, \{R. G.\}",

year = "2004",

month = may,

day = "31",

doi = "10.1016/j.apsusc.2004.02.029",

language = "English",

volume = "230",

pages = "18--23",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions

AU - Butcher, K. S.A.

AU - Afifuddin,

AU - Tansley, T. L.

AU - Brack, N.

AU - Pigram, P. J.

AU - Timmers, H.

AU - Prince, K. E.

AU - Elliman, R. G.

PY - 2004/5/31

Y1 - 2004/5/31

N2 - Metallic gallium was observed on the surfaces of GaN commercial samples following argon ion milling. SIMS measurements confirmed that the commercial GaN had approximately 0.02% bulk oxygen present. The SIMS signal was standardized using a specimen of known oxygen content, as determined by elastic recoil detection analysis using 200MeV heavy ions of 197 Au. Despite this 2-5% oxygen was observed by XPS in the bulk of the GaN after the argon ion milling. This oxygen is believed to be from the original surface oxide that re-cycles on the GaN surface during the ion milling.

AB - Metallic gallium was observed on the surfaces of GaN commercial samples following argon ion milling. SIMS measurements confirmed that the commercial GaN had approximately 0.02% bulk oxygen present. The SIMS signal was standardized using a specimen of known oxygen content, as determined by elastic recoil detection analysis using 200MeV heavy ions of 197 Au. Despite this 2-5% oxygen was observed by XPS in the bulk of the GaN after the argon ion milling. This oxygen is believed to be from the original surface oxide that re-cycles on the GaN surface during the ion milling.

KW - Argon ion milling

KW - Gallium nitride

KW - Ultra-high vacuum

UR - https://www.scopus.com/pages/publications/2542495326

U2 - 10.1016/j.apsusc.2004.02.029

DO - 10.1016/j.apsusc.2004.02.029

M3 - Article

SN - 0169-4332

VL - 230

SP - 18

EP - 23

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions

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