Gallium contacts on p-type silicon substrates

M. F. Stuckings; B. Fischer; G. Giroult; A. Cuevas; M. J. Stocks; A. W. Blakers

doi:10.1002/pip.393

Gallium contacts on p-type silicon substrates

M. F. Stuckings^*, B. Fischer, G. Giroult, A. Cuevas, M. J. Stocks, A. W. Blakers

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A significant reduction in contact resistance of palladium/silicon contacts was realised by the use of a thin intermediate gallium layer. The contact resistance of the palladium/gallium/silicon contact was found to be similar to aluminium/silicon contacts on 0·5 Ω cm silicon. Solar cells processed on 1 Ω cm substrates with this structure demonstrated better contact properties than conventional aluminium/silicon contacts. The improved characteristics are believed to be a result of gallium/silicon alloying at low temperature (400°C). The palladium layer is critical as aluminium/gallium/silicon layers show dramatically increased contact resistance. The palladium silicide may interact with the aluminium layer to form a stable ternary compound, preventing aluminium from penetrating deeper into the silicon.

Original language	English
Pages (from-to)	409-416
Number of pages	8
Journal	Progress in Photovoltaics: Research and Applications
Volume	9
Issue number	6
DOIs	https://doi.org/10.1002/pip.393
Publication status	Published - Nov 2001

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title = "Gallium contacts on p-type silicon substrates",

abstract = "A significant reduction in contact resistance of palladium/silicon contacts was realised by the use of a thin intermediate gallium layer. The contact resistance of the palladium/gallium/silicon contact was found to be similar to aluminium/silicon contacts on 0·5 Ω cm silicon. Solar cells processed on 1 Ω cm substrates with this structure demonstrated better contact properties than conventional aluminium/silicon contacts. The improved characteristics are believed to be a result of gallium/silicon alloying at low temperature (400°C). The palladium layer is critical as aluminium/gallium/silicon layers show dramatically increased contact resistance. The palladium silicide may interact with the aluminium layer to form a stable ternary compound, preventing aluminium from penetrating deeper into the silicon.",

author = "Stuckings, {M. F.} and B. Fischer and G. Giroult and A. Cuevas and Stocks, {M. J.} and Blakers, {A. W.}",

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T1 - Gallium contacts on p-type silicon substrates

AU - Stuckings, M. F.

AU - Fischer, B.

AU - Giroult, G.

AU - Cuevas, A.

AU - Stocks, M. J.

AU - Blakers, A. W.

PY - 2001/11

Y1 - 2001/11

N2 - A significant reduction in contact resistance of palladium/silicon contacts was realised by the use of a thin intermediate gallium layer. The contact resistance of the palladium/gallium/silicon contact was found to be similar to aluminium/silicon contacts on 0·5 Ω cm silicon. Solar cells processed on 1 Ω cm substrates with this structure demonstrated better contact properties than conventional aluminium/silicon contacts. The improved characteristics are believed to be a result of gallium/silicon alloying at low temperature (400°C). The palladium layer is critical as aluminium/gallium/silicon layers show dramatically increased contact resistance. The palladium silicide may interact with the aluminium layer to form a stable ternary compound, preventing aluminium from penetrating deeper into the silicon.

AB - A significant reduction in contact resistance of palladium/silicon contacts was realised by the use of a thin intermediate gallium layer. The contact resistance of the palladium/gallium/silicon contact was found to be similar to aluminium/silicon contacts on 0·5 Ω cm silicon. Solar cells processed on 1 Ω cm substrates with this structure demonstrated better contact properties than conventional aluminium/silicon contacts. The improved characteristics are believed to be a result of gallium/silicon alloying at low temperature (400°C). The palladium layer is critical as aluminium/gallium/silicon layers show dramatically increased contact resistance. The palladium silicide may interact with the aluminium layer to form a stable ternary compound, preventing aluminium from penetrating deeper into the silicon.

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U2 - 10.1002/pip.393

DO - 10.1002/pip.393

M3 - Article

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SP - 409

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JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 6

ER -

Gallium contacts on p-type silicon substrates

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