GaSb-based solar cells for multi-junction integration on Si substrates

J. Tournet*, S. Parola, A. Vauthelin, D. Montesdeoca Cardenes, S. Soresi, F. Martinez, Q. Lu, Y. Cuminal, P. J. Carrington, J. Décobert, A. Krier, Y. Rouillard, E. Tournié

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.

Original languageEnglish
Pages (from-to)444-450
Number of pages7
JournalSolar Energy Materials and Solar Cells
Volume191
DOIs
Publication statusPublished - Mar 2019
Externally publishedYes

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