TY - JOUR
T1 - GaSb-based solar cells for multi-junction integration on Si substrates
AU - Tournet, J.
AU - Parola, S.
AU - Vauthelin, A.
AU - Montesdeoca Cardenes, D.
AU - Soresi, S.
AU - Martinez, F.
AU - Lu, Q.
AU - Cuminal, Y.
AU - Carrington, P. J.
AU - Décobert, J.
AU - Krier, A.
AU - Rouillard, Y.
AU - Tournié, E.
N1 - Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2019/3
Y1 - 2019/3
N2 - We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.
AB - We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.
UR - http://www.scopus.com/inward/record.url?scp=85058091577&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2018.11.035
DO - 10.1016/j.solmat.2018.11.035
M3 - Article
SN - 0927-0248
VL - 191
SP - 444
EP - 450
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
ER -