Gettering of copper to hydrogen-induced cavities in multicrystalline silicon

A. Kinomura*, Y. Horino, Y. Nakano, J. S. Williams

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    The gettering properties of hydrogen-induced cavities have been examined for Cu impurity atoms inherent in multicrystalline Si. Initial areal densities of Cu atoms in the multicrystalline samples were in the range of (3-5) × 1013 cm-2, below the level that would provide a complete monolayer coverage of the internal surfaces of the cavities. Samples were first implanted with hydrogen and then annealed at 750 or 850 °C for 1 h to form cavities and induce subsequent gettering. Neutron activation analysis with chemical etching of the samples indicated that more than 90% of Cu atoms could be removed from the entire wafer by cavity gettering for both of the annealing temperatures.

    Original languageEnglish
    Article number066102
    JournalJournal of Applied Physics
    Volume98
    Issue number6
    DOIs
    Publication statusPublished - 15 Sept 2005

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