Gettering of copper to hydrogen-induced cavities in multicrystalline silicon

A. Kinomura*, Y. Horino, Y. Nakano, J. S. Williams

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)


    The gettering properties of hydrogen-induced cavities have been examined for Cu impurity atoms inherent in multicrystalline Si. Initial areal densities of Cu atoms in the multicrystalline samples were in the range of (3-5) × 1013 cm-2, below the level that would provide a complete monolayer coverage of the internal surfaces of the cavities. Samples were first implanted with hydrogen and then annealed at 750 or 850 °C for 1 h to form cavities and induce subsequent gettering. Neutron activation analysis with chemical etching of the samples indicated that more than 90% of Cu atoms could be removed from the entire wafer by cavity gettering for both of the annealing temperatures.

    Original languageEnglish
    Article number066102
    JournalJournal of Applied Physics
    Issue number6
    Publication statusPublished - 15 Sept 2005


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