Gettering of Pd to implantation-induced nanocavities in Si

D. A. Brett; Avevedo G.de M. Azevedo; D. J. Llewellyn; M. C. Ridgway

doi:10.1063/1.1597424

Gettering of Pd to implantation-induced nanocavities in Si

D. A. Brett^*, Avevedo G.de M. Azevedo, D. J. Llewellyn, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×10¹³ cm^-2 to 1×10¹⁵ cm ^-2 was investigated by using Rutherford backscattering technique. It was observed that the competition between silicide formation and nanocavity gettering limited gettering efficiency. The results showed that, for a given annealing temperature, the gettering efficiency increased as the dose decreased.

Original language	English
Pages (from-to)	946-947
Number of pages	2
Journal	Applied Physics Letters
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.1597424
Publication status	Published - 4 Aug 2003

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title = "Gettering of Pd to implantation-induced nanocavities in Si",

abstract = "The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×1013 cm-2 to 1×1015 cm -2 was investigated by using Rutherford backscattering technique. It was observed that the competition between silicide formation and nanocavity gettering limited gettering efficiency. The results showed that, for a given annealing temperature, the gettering efficiency increased as the dose decreased.",

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AU - Llewellyn, D. J.

AU - Ridgway, M. C.

PY - 2003/8/4

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N2 - The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×1013 cm-2 to 1×1015 cm -2 was investigated by using Rutherford backscattering technique. It was observed that the competition between silicide formation and nanocavity gettering limited gettering efficiency. The results showed that, for a given annealing temperature, the gettering efficiency increased as the dose decreased.

AB - The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×1013 cm-2 to 1×1015 cm -2 was investigated by using Rutherford backscattering technique. It was observed that the competition between silicide formation and nanocavity gettering limited gettering efficiency. The results showed that, for a given annealing temperature, the gettering efficiency increased as the dose decreased.

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JF - Applied Physics Letters

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Gettering of Pd to implantation-induced nanocavities in Si

Abstract

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