GISAXS studies of structural modifications in ion-beam amorphized Ge

I. D. Desnica-Franković; P. Dubcek; U. V. Desnica; S. Bernstorff; M. C. Ridgway; C. J. Glover

doi:10.1016/j.nimb.2006.03.093

GISAXS studies of structural modifications in ion-beam amorphized Ge

I. D. Desnica-Franković^*, P. Dubcek, U. V. Desnica, S. Bernstorff, M. C. Ridgway, C. J. Glover

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of ⁷⁴Ge, from 3 × 10¹² cm^-2 to 3 × 10¹⁶ cm^-2; at room- or liquid nitrogen-temperature, respectively. We have found that the micro-structure in amorphous Ge, continuously and consistently evolves as a function of ion dose but differs according to the implantation temperature. In RT-samples small vacancy nanoclusters agglomerate in the end-of-range region of implanted layer even before complete amorphization. With higher doses nanoclusters increase and coalesce into nano-voids. For the highest dose, the onset of porosity is confirmed. On the other hand, in LN-implanted samples, the clustering-related signal is much weaker and evolves more slowly.

Original language	English
Pages (from-to)	114-117
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	249
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2006.03.093
Publication status	Published - Aug 2006

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@article{38d79bf888d1408185306a3c56af0e3d,

title = "GISAXS studies of structural modifications in ion-beam amorphized Ge",

abstract = "Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74Ge, from 3 × 1012 cm-2 to 3 × 1016 cm-2; at room- or liquid nitrogen-temperature, respectively. We have found that the micro-structure in amorphous Ge, continuously and consistently evolves as a function of ion dose but differs according to the implantation temperature. In RT-samples small vacancy nanoclusters agglomerate in the end-of-range region of implanted layer even before complete amorphization. With higher doses nanoclusters increase and coalesce into nano-voids. For the highest dose, the onset of porosity is confirmed. On the other hand, in LN-implanted samples, the clustering-related signal is much weaker and evolves more slowly.",

keywords = "Amorphous Ge, GISAXS, Ion implantation, Nano-voids, Porosity",

author = "Desnica-Frankovi{\'c}, {I. D.} and P. Dubcek and Desnica, {U. V.} and S. Bernstorff and Ridgway, {M. C.} and Glover, {C. J.}",

year = "2006",

month = aug,

doi = "10.1016/j.nimb.2006.03.093",

language = "English",

volume = "249",

pages = "114--117",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-2 SPEC. ISS.",

}

TY - JOUR

T1 - GISAXS studies of structural modifications in ion-beam amorphized Ge

AU - Desnica-Franković, I. D.

AU - Dubcek, P.

AU - Desnica, U. V.

AU - Bernstorff, S.

AU - Ridgway, M. C.

AU - Glover, C. J.

PY - 2006/8

Y1 - 2006/8

N2 - Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74Ge, from 3 × 1012 cm-2 to 3 × 1016 cm-2; at room- or liquid nitrogen-temperature, respectively. We have found that the micro-structure in amorphous Ge, continuously and consistently evolves as a function of ion dose but differs according to the implantation temperature. In RT-samples small vacancy nanoclusters agglomerate in the end-of-range region of implanted layer even before complete amorphization. With higher doses nanoclusters increase and coalesce into nano-voids. For the highest dose, the onset of porosity is confirmed. On the other hand, in LN-implanted samples, the clustering-related signal is much weaker and evolves more slowly.

AB - Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74Ge, from 3 × 1012 cm-2 to 3 × 1016 cm-2; at room- or liquid nitrogen-temperature, respectively. We have found that the micro-structure in amorphous Ge, continuously and consistently evolves as a function of ion dose but differs according to the implantation temperature. In RT-samples small vacancy nanoclusters agglomerate in the end-of-range region of implanted layer even before complete amorphization. With higher doses nanoclusters increase and coalesce into nano-voids. For the highest dose, the onset of porosity is confirmed. On the other hand, in LN-implanted samples, the clustering-related signal is much weaker and evolves more slowly.

KW - Amorphous Ge

KW - GISAXS

KW - Ion implantation

KW - Nano-voids

KW - Porosity

UR - http://www.scopus.com/inward/record.url?scp=33745958032&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2006.03.093

DO - 10.1016/j.nimb.2006.03.093

M3 - Article

SN - 0168-583X

VL - 249

SP - 114

EP - 117

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2 SPEC. ISS.

ER -

GISAXS studies of structural modifications in ion-beam amorphized Ge

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