Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes

Shanlin Wang; Yi An Yin; Huaimin Gu; Naiyin Wang; Li Liu

doi:10.1109/JDT.2016.2583438

Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes

Shanlin Wang, Yi An Yin^*, Huaimin Gu, Naiyin Wang, Li Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

An Al composition graded superlattice AlGaN/AlGaN layer was adopted in AlGaN-based deep ultraviolet light-emitting diodes as a hole reserving layer and relieved the strain between the last quantum barrier and the AlGaN electron blocking layer. The simulation shows that the light output power and internal quantum efficiency of the newly structure are higher and the efficiency droop decreases from 43.6% to 28.8%, due to which the inserted layer weakened the polarization field in the MQWs, suppressed the electron leakage, and increased the hole injection efficiency.

Original language	English
Article number	7497505
Pages (from-to)	1112-1116
Number of pages	5
Journal	Journal of Display Technology
Volume	12
Issue number	10
DOIs	https://doi.org/10.1109/JDT.2016.2583438
Publication status	Published - Oct 2016
Externally published	Yes

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title = "Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes",

abstract = "An Al composition graded superlattice AlGaN/AlGaN layer was adopted in AlGaN-based deep ultraviolet light-emitting diodes as a hole reserving layer and relieved the strain between the last quantum barrier and the AlGaN electron blocking layer. The simulation shows that the light output power and internal quantum efficiency of the newly structure are higher and the efficiency droop decreases from 43.6% to 28.8%, due to which the inserted layer weakened the polarization field in the MQWs, suppressed the electron leakage, and increased the hole injection efficiency.",

keywords = "AlGaN/AlGaN superlattice, hole reserving layer, ultraviolet light-emitting diodes (UV-LEDs)",

author = "Shanlin Wang and Yin, {Yi An} and Huaimin Gu and Naiyin Wang and Li Liu",

note = "Publisher Copyright: {\textcopyright} 2005-2012 IEEE.",

year = "2016",

month = oct,

doi = "10.1109/JDT.2016.2583438",

language = "English",

volume = "12",

pages = "1112--1116",

journal = "Journal of Display Technology",

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T1 - Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes

AU - Wang, Shanlin

AU - Yin, Yi An

AU - Gu, Huaimin

AU - Wang, Naiyin

AU - Liu, Li

PY - 2016/10

Y1 - 2016/10

N2 - An Al composition graded superlattice AlGaN/AlGaN layer was adopted in AlGaN-based deep ultraviolet light-emitting diodes as a hole reserving layer and relieved the strain between the last quantum barrier and the AlGaN electron blocking layer. The simulation shows that the light output power and internal quantum efficiency of the newly structure are higher and the efficiency droop decreases from 43.6% to 28.8%, due to which the inserted layer weakened the polarization field in the MQWs, suppressed the electron leakage, and increased the hole injection efficiency.

AB - An Al composition graded superlattice AlGaN/AlGaN layer was adopted in AlGaN-based deep ultraviolet light-emitting diodes as a hole reserving layer and relieved the strain between the last quantum barrier and the AlGaN electron blocking layer. The simulation shows that the light output power and internal quantum efficiency of the newly structure are higher and the efficiency droop decreases from 43.6% to 28.8%, due to which the inserted layer weakened the polarization field in the MQWs, suppressed the electron leakage, and increased the hole injection efficiency.

KW - AlGaN/AlGaN superlattice

KW - hole reserving layer

KW - ultraviolet light-emitting diodes (UV-LEDs)

UR - http://www.scopus.com/inward/record.url?scp=84991661574&partnerID=8YFLogxK

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DO - 10.1109/JDT.2016.2583438

M3 - Article

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VL - 12

SP - 1112

EP - 1116

JO - Journal of Display Technology

JF - Journal of Display Technology

IS - 10

M1 - 7497505

ER -

Graded AlGaN/AlGaN superlattice insert layer improved performance of AlGaN-based deep ultraviolet light-emitting diodes

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