Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD

Kallista Sears; Jenny Wong-Leung; Manuela Buda; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2004.1577477

Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD

Kallista Sears^*, Jenny Wong-Leung, Manuela Buda, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Citations (Scopus)

Abstract

InAs/GaAs quantum dots (QDs) were grown by low pressure Metal-Organic Chemical Vapour Deposition in the Stranski-Krastanow growth mode. We describe the influence of growth parameters such as coverage, the V/III ratio, growth temperature and growth interrupts on the QD nucleation and the importance of avoiding formation of larger islands which are particularly susceptible to dislocations. After an extensive study of these growth parameters we are now able to achieve device quality InAs/GaAs QDs with a density of 3×10 ¹⁰cm^-2. Three layers of these QDs have been incorporated into a thin p-clad laser structure which lases from an excited state due to high absorption loss and insufficient ground state gain.

Original language	English
Title of host publication	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2004.1577477
Publication status	Published - 2005
Event	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: 8 Dec 2004 → 10 Dec 2004

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Bribane, QLD
Period	8/12/04 → 10/12/04

Access to Document

10.1109/COMMAD.2004.1577477

Cite this

Sears, K., Wong-Leung, J., Buda, M., Tan, H. H., & Jagadish, C. (2005). Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings (pp. 1-4). Article 1577477 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2004.1577477

@inproceedings{f4c3d7a627054e65a54d3dd764b39a5e,

title = "Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD",

abstract = "InAs/GaAs quantum dots (QDs) were grown by low pressure Metal-Organic Chemical Vapour Deposition in the Stranski-Krastanow growth mode. We describe the influence of growth parameters such as coverage, the V/III ratio, growth temperature and growth interrupts on the QD nucleation and the importance of avoiding formation of larger islands which are particularly susceptible to dislocations. After an extensive study of these growth parameters we are now able to achieve device quality InAs/GaAs QDs with a density of 3×10 10cm-2. Three layers of these QDs have been incorporated into a thin p-clad laser structure which lases from an excited state due to high absorption loss and insufficient ground state gain.",

author = "Kallista Sears and Jenny Wong-Leung and Manuela Buda and Tan, {H. H.} and C. Jagadish",

year = "2005",

doi = "10.1109/COMMAD.2004.1577477",

language = "English",

isbn = "0780388208",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "1--4",

booktitle = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings",

note = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 08-12-2004 Through 10-12-2004",

}

Sears, K, Wong-Leung, J, Buda, M, Tan, HH & Jagadish, C 2005, Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD. in COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings., 1577477, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 1-4, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 8/12/04. https://doi.org/10.1109/COMMAD.2004.1577477

Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD. / Sears, Kallista; Wong-Leung, Jenny; Buda, Manuela et al.
COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 1-4 1577477 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD

AU - Sears, Kallista

AU - Wong-Leung, Jenny

AU - Buda, Manuela

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2005

Y1 - 2005

N2 - InAs/GaAs quantum dots (QDs) were grown by low pressure Metal-Organic Chemical Vapour Deposition in the Stranski-Krastanow growth mode. We describe the influence of growth parameters such as coverage, the V/III ratio, growth temperature and growth interrupts on the QD nucleation and the importance of avoiding formation of larger islands which are particularly susceptible to dislocations. After an extensive study of these growth parameters we are now able to achieve device quality InAs/GaAs QDs with a density of 3×10 10cm-2. Three layers of these QDs have been incorporated into a thin p-clad laser structure which lases from an excited state due to high absorption loss and insufficient ground state gain.

AB - InAs/GaAs quantum dots (QDs) were grown by low pressure Metal-Organic Chemical Vapour Deposition in the Stranski-Krastanow growth mode. We describe the influence of growth parameters such as coverage, the V/III ratio, growth temperature and growth interrupts on the QD nucleation and the importance of avoiding formation of larger islands which are particularly susceptible to dislocations. After an extensive study of these growth parameters we are now able to achieve device quality InAs/GaAs QDs with a density of 3×10 10cm-2. Three layers of these QDs have been incorporated into a thin p-clad laser structure which lases from an excited state due to high absorption loss and insufficient ground state gain.

UR - http://www.scopus.com/inward/record.url?scp=46149087059&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2004.1577477

DO - 10.1109/COMMAD.2004.1577477

M3 - Conference contribution

SN - 0780388208

SN - 9780780388208

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 1

EP - 4

BT - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings

T2 - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 8 December 2004 through 10 December 2004

ER -

Sears K, Wong-Leung J, Buda M, Tan HH , Jagadish C. Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 1-4. 1577477. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2004.1577477

Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this