Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD

Kallista Sears; Jenny Wong-Leung; Manuela Buda; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2004.1577477

Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD

Kallista Sears^*
, Jenny Wong-Leung
, Manuela Buda
, H. H. Tan
, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

12 Citations (Scopus)

Abstract

InAs/GaAs quantum dots (QDs) were grown by low pressure Metal-Organic Chemical Vapour Deposition in the Stranski-Krastanow growth mode. We describe the influence of growth parameters such as coverage, the V/III ratio, growth temperature and growth interrupts on the QD nucleation and the importance of avoiding formation of larger islands which are particularly susceptible to dislocations. After an extensive study of these growth parameters we are now able to achieve device quality InAs/GaAs QDs with a density of 3×10 ¹⁰cm^-2. Three layers of these QDs have been incorporated into a thin p-clad laser structure which lases from an excited state due to high absorption loss and insufficient ground state gain.

Original language	English
Title of host publication	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2004.1577477
Publication status	Published - 2005
Event	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: 8 Dec 2004 → 10 Dec 2004

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Bribane, QLD
Period	8/12/04 → 10/12/04

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10.1109/COMMAD.2004.1577477

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Sears, K., Wong-Leung, J., Buda, M., Tan, H. H., & Jagadish, C. (2005). Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings (pp. 1-4). Article 1577477 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2004.1577477

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title = "Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD",

abstract = "InAs/GaAs quantum dots (QDs) were grown by low pressure Metal-Organic Chemical Vapour Deposition in the Stranski-Krastanow growth mode. We describe the influence of growth parameters such as coverage, the V/III ratio, growth temperature and growth interrupts on the QD nucleation and the importance of avoiding formation of larger islands which are particularly susceptible to dislocations. After an extensive study of these growth parameters we are now able to achieve device quality InAs/GaAs QDs with a density of 3×10 10cm-2. Three layers of these QDs have been incorporated into a thin p-clad laser structure which lases from an excited state due to high absorption loss and insufficient ground state gain.",

author = "Kallista Sears and Jenny Wong-Leung and Manuela Buda and Tan, \{H. H.\} and C. Jagadish",

year = "2005",

doi = "10.1109/COMMAD.2004.1577477",

language = "English",

isbn = "0780388208",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "1--4",

booktitle = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings",

note = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 08-12-2004 Through 10-12-2004",

}

Sears, K, Wong-Leung, J, Buda, M, Tan, HH & Jagadish, C 2005, Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD. in COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings., 1577477, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 1-4, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 8/12/04. https://doi.org/10.1109/COMMAD.2004.1577477

Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD. / Sears, Kallista; Wong-Leung, Jenny; Buda, Manuela et al.
COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 1-4 1577477 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

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T1 - Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD

AU - Sears, Kallista

AU - Wong-Leung, Jenny

AU - Buda, Manuela

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2005

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N2 - InAs/GaAs quantum dots (QDs) were grown by low pressure Metal-Organic Chemical Vapour Deposition in the Stranski-Krastanow growth mode. We describe the influence of growth parameters such as coverage, the V/III ratio, growth temperature and growth interrupts on the QD nucleation and the importance of avoiding formation of larger islands which are particularly susceptible to dislocations. After an extensive study of these growth parameters we are now able to achieve device quality InAs/GaAs QDs with a density of 3×10 10cm-2. Three layers of these QDs have been incorporated into a thin p-clad laser structure which lases from an excited state due to high absorption loss and insufficient ground state gain.

AB - InAs/GaAs quantum dots (QDs) were grown by low pressure Metal-Organic Chemical Vapour Deposition in the Stranski-Krastanow growth mode. We describe the influence of growth parameters such as coverage, the V/III ratio, growth temperature and growth interrupts on the QD nucleation and the importance of avoiding formation of larger islands which are particularly susceptible to dislocations. After an extensive study of these growth parameters we are now able to achieve device quality InAs/GaAs QDs with a density of 3×10 10cm-2. Three layers of these QDs have been incorporated into a thin p-clad laser structure which lases from an excited state due to high absorption loss and insufficient ground state gain.

UR - https://www.scopus.com/pages/publications/46149087059

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M3 - Conference Paper

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SN - 9780780388208

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

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BT - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings

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ER -

Sears K, Wong-Leung J, Buda M, Tan HH , Jagadish C. Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 1-4. 1577477. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2004.1577477

Growth and characterisation of InAs/GaAs quantum dots grown by MOCVD

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