Growth and characterization of AlInAsSb layers lattice-matched to GaSb

Engineering

• Lattice Layer 100%
• Low-Temperature 66%
• Random Alloy 66%
• Energy Engineering 33%
• Optoelectronic Device 33%
• Atomic Force Microscopy 33%
• Ray Diffraction 33%
• Al Content 33%
• Smooth Surface 33%
• Peak Energy 33%
• Theoretical Value 33%

Physics

• Photoluminescence 100%
• Optoelectronic Device 20%
• X Ray Diffraction 20%
• Energy Gaps (Solid State) 20%
• Atomic Force Microscopy 20%
• Applied Physics 20%

Material Science

• Photoluminescence 100%
• Molecular Beam Epitaxy 20%
• Annealing 20%
• X-Ray Diffraction 20%