Growth and characterization of compound semiconductor nanowires on Si

Q. Gao; J. H. Kang; H. H. Tan; H. E. Jackson; L. M. Smith; J. M. Yarrison-Rice; Jin Zou; C. Jagadish

doi:10.1109/NANO.2011.6144553

Growth and characterization of compound semiconductor nanowires on Si

Q. Gao, J. H. Kang, H. H. Tan, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Jin Zou, C. Jagadish^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We review GaAs nanowires and related nanowire heterostructures grown on Si (111) substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and strain effects on the bandgap energy of GaAs nanowires.

Original language	English
Title of host publication	2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages	44-47
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2011.6144553
Publication status	Published - 2011
Event	2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States Duration: 15 Aug 2011 → 19 Aug 2011

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Country/Territory	United States
City	Portland, OR
Period	15/08/11 → 19/08/11

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10.1109/NANO.2011.6144553

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Gao, Q., Kang, J. H., Tan, H. H., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, J., & Jagadish, C. (2011). Growth and characterization of compound semiconductor nanowires on Si. In 2011 11th IEEE International Conference on Nanotechnology, NANO 2011 (pp. 44-47). Article 6144553 (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2011.6144553

@inproceedings{69d63dd005b34c6aa13bece39758f8d6,

title = "Growth and characterization of compound semiconductor nanowires on Si",

abstract = "We review GaAs nanowires and related nanowire heterostructures grown on Si (111) substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and strain effects on the bandgap energy of GaAs nanowires.",

author = "Q. Gao and Kang, {J. H.} and Tan, {H. H.} and Jackson, {H. E.} and Smith, {L. M.} and Yarrison-Rice, {J. M.} and Jin Zou and C. Jagadish",

year = "2011",

doi = "10.1109/NANO.2011.6144553",

language = "English",

isbn = "9781457715143",

series = "Proceedings of the IEEE Conference on Nanotechnology",

pages = "44--47",

booktitle = "2011 11th IEEE International Conference on Nanotechnology, NANO 2011",

note = "2011 11th IEEE International Conference on Nanotechnology, NANO 2011 ; Conference date: 15-08-2011 Through 19-08-2011",

}

Gao, Q, Kang, JH, Tan, HH, Jackson, HE, Smith, LM, Yarrison-Rice, JM, Zou, J & Jagadish, C 2011, Growth and characterization of compound semiconductor nanowires on Si. in 2011 11th IEEE International Conference on Nanotechnology, NANO 2011., 6144553, Proceedings of the IEEE Conference on Nanotechnology, pp. 44-47, 2011 11th IEEE International Conference on Nanotechnology, NANO 2011, Portland, OR, United States, 15/08/11. https://doi.org/10.1109/NANO.2011.6144553

TY - GEN

T1 - Growth and characterization of compound semiconductor nanowires on Si

AU - Gao, Q.

AU - Kang, J. H.

AU - Tan, H. H.

AU - Jackson, H. E.

AU - Smith, L. M.

AU - Yarrison-Rice, J. M.

AU - Zou, Jin

AU - Jagadish, C.

PY - 2011

Y1 - 2011

N2 - We review GaAs nanowires and related nanowire heterostructures grown on Si (111) substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and strain effects on the bandgap energy of GaAs nanowires.

AB - We review GaAs nanowires and related nanowire heterostructures grown on Si (111) substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and strain effects on the bandgap energy of GaAs nanowires.

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U2 - 10.1109/NANO.2011.6144553

DO - 10.1109/NANO.2011.6144553

M3 - Conference contribution

SN - 9781457715143

T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 44

EP - 47

BT - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011

T2 - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011

Y2 - 15 August 2011 through 19 August 2011

ER -

Growth and characterization of compound semiconductor nanowires on Si

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