Growth and characterization of GaAs1&#x2212;xSbx nanowires

X. Yuan; H. H. Tan; P. Parkinson; J. Wong-Leung; S. Breuer; Q. Gao; C. Jagadish

doi:10.1109/COMMAD.2012.6472400

Growth and characterization of GaAs_1−xSb_x nanowires

X. Yuan^*, H. H. Tan, P. Parkinson, J. Wong-Leung, S. Breuer, Q. Gao, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report the structural and optical characterization of GaAs _1-xSb_x nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	141-142
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472400
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472400

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Yuan, X., Tan, H. H., Parkinson, P., Wong-Leung, J., Breuer, S., Gao, Q., & Jagadish, C. (2012). Growth and characterization of GaAs_1−xSb_x nanowires. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 141-142). Article 6472400 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472400

@inproceedings{1ec4c11edb0741d59335ebc237fb102b,

title = "Growth and characterization of GaAs1−xSbx nanowires",

abstract = "We report the structural and optical characterization of GaAs 1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.",

author = "X. Yuan and Tan, {H. H.} and P. Parkinson and J. Wong-Leung and S. Breuer and Q. Gao and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472400",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "141--142",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Yuan, X, Tan, HH, Parkinson, P, Wong-Leung, J, Breuer, S, Gao, Q & Jagadish, C 2012, Growth and characterization of GaAs_1−xSb_x nanowires. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472400, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 141-142, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472400

Growth and characterization of GaAs_1−xSb_x nanowires. / Yuan, X.; Tan, H. H.; Parkinson, P. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 141-142 6472400 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth and characterization of GaAs1−xSbx nanowires

AU - Yuan, X.

AU - Tan, H. H.

AU - Parkinson, P.

AU - Wong-Leung, J.

AU - Breuer, S.

AU - Gao, Q.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - We report the structural and optical characterization of GaAs 1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.

AB - We report the structural and optical characterization of GaAs 1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.

UR - http://www.scopus.com/inward/record.url?scp=84875598180&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2012.6472400

DO - 10.1109/COMMAD.2012.6472400

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 141

EP - 142

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Yuan X, Tan HH, Parkinson P, Wong-Leung J, Breuer S, Gao Q et al. Growth and characterization of GaAs_1−xSb_x nanowires. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 141-142. 6472400. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472400

Growth and characterization of GaAs_1−xSb_x nanowires

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Growth and characterization of GaAs1&#x2212;xSbx nanowires

Abstract

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Growth and characterization of GaAs_1−xSb_x nanowires