Growth and characterization of III-V compound semiconductor nanowires

Q. Gao, H. H. Tan, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Jin Zou, M. Johnston, C. Jagadish*

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition. Transmission and scanning electron microscopy, micro-photolumine-scence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and band structure.

    Original languageEnglish
    Title of host publication16th Opto-Electronics and Communications Conference, OECC 2011
    Pages366-367
    Number of pages2
    Publication statusPublished - 2011
    Event16th Opto-Electronics and Communications Conference, OECC 2011 - Kaohsiung, Taiwan
    Duration: 4 Jul 20118 Jul 2011

    Publication series

    Name16th Opto-Electronics and Communications Conference, OECC 2011

    Conference

    Conference16th Opto-Electronics and Communications Conference, OECC 2011
    Country/TerritoryTaiwan
    CityKaohsiung
    Period4/07/118/07/11

    Fingerprint

    Dive into the research topics of 'Growth and characterization of III-V compound semiconductor nanowires'. Together they form a unique fingerprint.

    Cite this