Growth and characterization of InAs/GaAs quantum dots and diode lasers

Kallista Sears; Hoe Tan Hark; Manuela Buda; Jenny Wong-Leung; Chennupati Jagadish

doi:10.1109/ICONN.2006.340664

Growth and characterization of InAs/GaAs quantum dots and diode lasers

Kallista Sears^*, Hoe Tan Hark, Manuela Buda, Jenny Wong-Leung, Chennupati Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.

Original language	English
Title of host publication	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Pages	505-508
Number of pages	4
DOIs	https://doi.org/10.1109/ICONN.2006.340664
Publication status	Published - 2006
Event	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 - Brisbane, Australia Duration: 3 Jul 2006 → 6 Jul 2006

Publication series

Name	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

Conference

Conference	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006
Country/Territory	Australia
City	Brisbane
Period	3/07/06 → 6/07/06

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10.1109/ICONN.2006.340664

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Sears, K., Hark, H. T., Buda, M., Wong-Leung, J., & Jagadish, C. (2006). Growth and characterization of InAs/GaAs quantum dots and diode lasers. In Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN (pp. 505-508). Article 4143444 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN). https://doi.org/10.1109/ICONN.2006.340664

@inproceedings{8f5a4388b1cb418a84f602e816176747,

title = "Growth and characterization of InAs/GaAs quantum dots and diode lasers",

abstract = "This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.",

keywords = "InAs/GaAs, Laser, MOCVD, Quantum dots",

author = "Kallista Sears and Hark, {Hoe Tan} and Manuela Buda and Jenny Wong-Leung and Chennupati Jagadish",

year = "2006",

doi = "10.1109/ICONN.2006.340664",

language = "English",

isbn = "1424404533",

series = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

pages = "505--508",

booktitle = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

note = "2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 ; Conference date: 03-07-2006 Through 06-07-2006",

}

Sears, K, Hark, HT, Buda, M, Wong-Leung, J & Jagadish, C 2006, Growth and characterization of InAs/GaAs quantum dots and diode lasers. in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN., 4143444, Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 505-508, 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006, Brisbane, Australia, 3/07/06. https://doi.org/10.1109/ICONN.2006.340664

Growth and characterization of InAs/GaAs quantum dots and diode lasers. / Sears, Kallista; Hark, Hoe Tan; Buda, Manuela et al.
Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. 2006. p. 505-508 4143444 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth and characterization of InAs/GaAs quantum dots and diode lasers

AU - Sears, Kallista

AU - Hark, Hoe Tan

AU - Buda, Manuela

AU - Wong-Leung, Jenny

AU - Jagadish, Chennupati

PY - 2006

Y1 - 2006

N2 - This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.

AB - This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.

KW - InAs/GaAs

KW - Laser

KW - MOCVD

KW - Quantum dots

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U2 - 10.1109/ICONN.2006.340664

DO - 10.1109/ICONN.2006.340664

M3 - Conference contribution

SN - 1424404533

SN - 9781424404537

T3 - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

SP - 505

EP - 508

BT - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

T2 - 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006

Y2 - 3 July 2006 through 6 July 2006

ER -

Growth and characterization of InAs/GaAs quantum dots and diode lasers

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