Growth and characterization of IV-VI semiconductor heterostructures on (100) BaF2

I. Na Chao; Patrick J. McCann; Wei Li Yuan; Edgar A. O'Rear; Shu Yuan

doi:10.1016/S0040-6090(97)01047-X

Growth and characterization of IV-VI semiconductor heterostructures on (100) BaF₂

I. Na Chao^*, Patrick J. McCann, Wei Li Yuan, Edgar A. O'Rear, Shu Yuan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Techniques for growing p-PbSe_0.78Te_0.22/n-Pb_1-xSn_xSe _1-yTe_y/n-PbSe_0.78Te_0.22 double heterostructures (x up to 0.2 in the liquid growth solution) on (100) BaF₂ substrates by liquid phase epitaxy (LPE) are described. Inclusion-free epilayers and good wipeoffs have been consistently achieved using these techniques. Surface morphology of the epilayers is investigated using Nomarski microscopy and atomic force microscopy (AFM). Fourier transform infrared (FTIR) transmission measurements show optical absorption edge energies vary monotonically with tin content and with temperature at an average rate of 0.41 meV per degree in the temperature range of 300 K to 130 K. Tunable diode lasers (TDLs) fabricated from these structures are expected to span a spectral range of 5-7 μm for x = 5% and 6-9 μm for x = 12% in this temperature range.

Original language	English
Pages (from-to)	126-135
Number of pages	10
Journal	Thin Solid Films
Volume	323
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(97)01047-X
Publication status	Published - 22 Jun 1998

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title = "Growth and characterization of IV-VI semiconductor heterostructures on (100) BaF2",

abstract = "Techniques for growing p-PbSe0.78Te0.22/n-Pb1-xSnxSe 1-yTey/n-PbSe0.78Te0.22 double heterostructures (x up to 0.2 in the liquid growth solution) on (100) BaF2 substrates by liquid phase epitaxy (LPE) are described. Inclusion-free epilayers and good wipeoffs have been consistently achieved using these techniques. Surface morphology of the epilayers is investigated using Nomarski microscopy and atomic force microscopy (AFM). Fourier transform infrared (FTIR) transmission measurements show optical absorption edge energies vary monotonically with tin content and with temperature at an average rate of 0.41 meV per degree in the temperature range of 300 K to 130 K. Tunable diode lasers (TDLs) fabricated from these structures are expected to span a spectral range of 5-7 μm for x = 5% and 6-9 μm for x = 12% in this temperature range.",

keywords = "Epilayers, Heterostructures, Liquid phase epitaxy, Wipeoffs",

author = "Chao, {I. Na} and McCann, {Patrick J.} and Yuan, {Wei Li} and O'Rear, {Edgar A.} and Shu Yuan",

year = "1998",

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doi = "10.1016/S0040-6090(97)01047-X",

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T1 - Growth and characterization of IV-VI semiconductor heterostructures on (100) BaF2

AU - Chao, I. Na

AU - McCann, Patrick J.

AU - Yuan, Wei Li

AU - O'Rear, Edgar A.

AU - Yuan, Shu

PY - 1998/6/22

Y1 - 1998/6/22

N2 - Techniques for growing p-PbSe0.78Te0.22/n-Pb1-xSnxSe 1-yTey/n-PbSe0.78Te0.22 double heterostructures (x up to 0.2 in the liquid growth solution) on (100) BaF2 substrates by liquid phase epitaxy (LPE) are described. Inclusion-free epilayers and good wipeoffs have been consistently achieved using these techniques. Surface morphology of the epilayers is investigated using Nomarski microscopy and atomic force microscopy (AFM). Fourier transform infrared (FTIR) transmission measurements show optical absorption edge energies vary monotonically with tin content and with temperature at an average rate of 0.41 meV per degree in the temperature range of 300 K to 130 K. Tunable diode lasers (TDLs) fabricated from these structures are expected to span a spectral range of 5-7 μm for x = 5% and 6-9 μm for x = 12% in this temperature range.

AB - Techniques for growing p-PbSe0.78Te0.22/n-Pb1-xSnxSe 1-yTey/n-PbSe0.78Te0.22 double heterostructures (x up to 0.2 in the liquid growth solution) on (100) BaF2 substrates by liquid phase epitaxy (LPE) are described. Inclusion-free epilayers and good wipeoffs have been consistently achieved using these techniques. Surface morphology of the epilayers is investigated using Nomarski microscopy and atomic force microscopy (AFM). Fourier transform infrared (FTIR) transmission measurements show optical absorption edge energies vary monotonically with tin content and with temperature at an average rate of 0.41 meV per degree in the temperature range of 300 K to 130 K. Tunable diode lasers (TDLs) fabricated from these structures are expected to span a spectral range of 5-7 μm for x = 5% and 6-9 μm for x = 12% in this temperature range.

KW - Epilayers

KW - Heterostructures

KW - Liquid phase epitaxy

KW - Wipeoffs

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M3 - Article

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SP - 126

EP - 135

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Growth and characterization of IV-VI semiconductor heterostructures on (100) BaF₂

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