Growth and confinement effects in III-V semiconductor nanostructures

G. Jolley*, Lan Fu, H. H. Tan, C. Jagadish

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Semiconductor nanostructures have the potential to enhance the performance of numerous opto-electronic devices. Experimental results of quantum dot infrared photodetectors and quantum dot solar cells are presented and the effects of the carrier confinement on the device performance are discussed. Due to the limitation of current quantum dot growth techniques it is concluded that a level of control over the thermal interactions with electrons in nanostructures that would allow these devices to reach their full theoretical potential has not yet been achieved.

    Original languageEnglish
    Title of host publicationConference Program - MOC'11
    Subtitle of host publication17th Microoptics Conference
    Publication statusPublished - 2011
    Event17th Microoptics Conference, MOC'11 - Sendai, Japan
    Duration: 30 Oct 20112 Nov 2011

    Publication series

    NameConference Program - MOC'11: 17th Microoptics Conference

    Conference

    Conference17th Microoptics Conference, MOC'11
    Country/TerritoryJapan
    CitySendai
    Period30/10/112/11/11

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