Growth and properties of III-V compound semiconductor heterostructure nanowires

Q. Gao; H. H. Tan; H. E. Jackson; L. M. Smith; J. M. Yarrison-Rice; Jin Zou; C. Jagadish

doi:10.1088/0268-1242/26/1/014035

Growth and properties of III-V compound semiconductor heterostructure nanowires

Q. Gao^*, H. H. Tan, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Jin Zou, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs substrates by metal organic chemical vapor deposition via vapor-liquid-solid mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, non-radiative surface and bulk defects, carrier lifetime and strain effects on the bandgap energy.

Original language	English
Article number	014035
Journal	Semiconductor Science and Technology
Volume	26
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/26/1/014035
Publication status	Published - Jan 2011

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10.1088/0268-1242/26/1/014035

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title = "Growth and properties of III-V compound semiconductor heterostructure nanowires",

abstract = "We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs substrates by metal organic chemical vapor deposition via vapor-liquid-solid mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, non-radiative surface and bulk defects, carrier lifetime and strain effects on the bandgap energy.",

author = "Q. Gao and Tan, {H. H.} and Jackson, {H. E.} and Smith, {L. M.} and Yarrison-Rice, {J. M.} and Jin Zou and C. Jagadish",

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AU - Gao, Q.

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AU - Jackson, H. E.

AU - Smith, L. M.

AU - Yarrison-Rice, J. M.

AU - Zou, Jin

AU - Jagadish, C.

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AB - We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs substrates by metal organic chemical vapor deposition via vapor-liquid-solid mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, non-radiative surface and bulk defects, carrier lifetime and strain effects on the bandgap energy.

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DO - 10.1088/0268-1242/26/1/014035

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VL - 26

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Growth and properties of III-V compound semiconductor heterostructure nanowires

Abstract

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