Growth behavior of epitaxial semiconductor axial nanowire heterostructures

J. Zou; M. Paladugu; Y. N. Guo; X. Zhang; G. J. Auchterlonie; H. J. Joyce; Q. Gao; H. H. Tan; C. Jagadish; Y. Kim

doi:10.1109/COMMAD.2008.4802094

Growth behavior of epitaxial semiconductor axial nanowire heterostructures

J. Zou^*, M. Paladugu, Y. N. Guo, X. Zhang, G. J. Auchterlonie, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, Y. Kim

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires.

Original language	English
Title of host publication	Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Pages	71-74
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2008.4802094
Publication status	Published - 2008
Event	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia Duration: 28 Jul 2008 → 1 Aug 2008

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Country/Territory	Australia
City	Sydney, NSW
Period	28/07/08 → 1/08/08

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10.1109/COMMAD.2008.4802094

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Zou, J., Paladugu, M., Guo, Y. N., Zhang, X., Auchterlonie, G. J., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C., & Kim, Y. (2008). Growth behavior of epitaxial semiconductor axial nanowire heterostructures. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 (pp. 71-74). Article 4802094 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2008.4802094

@inproceedings{a6c0b3fb84cd4012bd65fc777e37d436,

title = "Growth behavior of epitaxial semiconductor axial nanowire heterostructures",

abstract = "In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires.",

keywords = "Crystal growth, Epitaxy, Heterostructues, Nanowires, Nucleation and growth, Vapor-liquid-solid",

author = "J. Zou and M. Paladugu and Guo, {Y. N.} and X. Zhang and Auchterlonie, {G. J.} and Joyce, {H. J.} and Q. Gao and Tan, {H. H.} and C. Jagadish and Y. Kim",

year = "2008",

doi = "10.1109/COMMAD.2008.4802094",

language = "English",

isbn = "9781424427178",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "71--74",

booktitle = "Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08",

note = "2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 ; Conference date: 28-07-2008 Through 01-08-2008",

}

Zou, J, Paladugu, M, Guo, YN, Zhang, X, Auchterlonie, GJ, Joyce, HJ, Gao, Q, Tan, HH , Jagadish, C & Kim, Y 2008, Growth behavior of epitaxial semiconductor axial nanowire heterostructures. in Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08., 4802094, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 71-74, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Sydney, NSW, Australia, 28/07/08. https://doi.org/10.1109/COMMAD.2008.4802094

Growth behavior of epitaxial semiconductor axial nanowire heterostructures. / Zou, J.; Paladugu, M.; Guo, Y. N. et al.
Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 71-74 4802094 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth behavior of epitaxial semiconductor axial nanowire heterostructures

AU - Zou, J.

AU - Paladugu, M.

AU - Guo, Y. N.

AU - Zhang, X.

AU - Auchterlonie, G. J.

AU - Joyce, H. J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Kim, Y.

PY - 2008

Y1 - 2008

N2 - In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires.

AB - In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires.

KW - Crystal growth

KW - Epitaxy

KW - Heterostructues

KW - Nanowires

KW - Nucleation and growth

KW - Vapor-liquid-solid

UR - http://www.scopus.com/inward/record.url?scp=64849108226&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2008.4802094

DO - 10.1109/COMMAD.2008.4802094

M3 - Conference contribution

SN - 9781424427178

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 71

EP - 74

BT - Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08

T2 - 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08

Y2 - 28 July 2008 through 1 August 2008

ER -

Zou J, Paladugu M, Guo YN, Zhang X, Auchterlonie GJ, Joyce HJ et al. Growth behavior of epitaxial semiconductor axial nanowire heterostructures. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 71-74. 4802094. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2008.4802094

Growth behavior of epitaxial semiconductor axial nanowire heterostructures

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