Growth mechanism of truncated triangular GaAs nanowires

J. Zou; H. Wang; G. J. Auchterlonie; M. Paladugu; Y. N. Gao; Y. Kim; H. J. Joyce; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1109/ICONN.2006.340690

Growth mechanism of truncated triangular GaAs nanowires

J. Zou^*, H. Wang, G. J. Auchterlonie, M. Paladugu, Y. N. Gao, Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, we have determined the growth mechanism of truncated triangular GaAs nanowires.

Original language	English
Title of host publication	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Pages	604-605
Number of pages	2
DOIs	https://doi.org/10.1109/ICONN.2006.340690
Publication status	Published - 2006
Event	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 - Brisbane, Australia Duration: 3 Jul 2006 → 6 Jul 2006

Publication series

Name	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

Conference

Conference	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006
Country/Territory	Australia
City	Brisbane
Period	3/07/06 → 6/07/06

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10.1109/ICONN.2006.340690

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Zou, J., Wang, H., Auchterlonie, G. J., Paladugu, M., Gao, Y. N., Kim, Y., Joyce, H. J., Gao, Q., Tan, H. H., & Jagadish, C. (2006). Growth mechanism of truncated triangular GaAs nanowires. In Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN (pp. 604-605). Article 4143470 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN). https://doi.org/10.1109/ICONN.2006.340690

@inproceedings{df1ef667d6bd4f649e51f9629f22249c,

title = "Growth mechanism of truncated triangular GaAs nanowires",

abstract = "During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, we have determined the growth mechanism of truncated triangular GaAs nanowires.",

keywords = "GaAs, Lateral growth, Metalorganic chemical vapor deposition, Nanowire, SEM, TEM",

author = "J. Zou and H. Wang and Auchterlonie, {G. J.} and M. Paladugu and Gao, {Y. N.} and Y. Kim and Joyce, {H. J.} and Q. Gao and Tan, {H. H.} and C. Jagadish",

year = "2006",

doi = "10.1109/ICONN.2006.340690",

language = "English",

isbn = "1424404533",

series = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

pages = "604--605",

booktitle = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

note = "2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 ; Conference date: 03-07-2006 Through 06-07-2006",

}

Zou, J, Wang, H, Auchterlonie, GJ, Paladugu, M, Gao, YN, Kim, Y, Joyce, HJ, Gao, Q, Tan, HH & Jagadish, C 2006, Growth mechanism of truncated triangular GaAs nanowires. in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN., 4143470, Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 604-605, 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006, Brisbane, Australia, 3/07/06. https://doi.org/10.1109/ICONN.2006.340690

Growth mechanism of truncated triangular GaAs nanowires. / Zou, J.; Wang, H.; Auchterlonie, G. J. et al.
Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. 2006. p. 604-605 4143470 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth mechanism of truncated triangular GaAs nanowires

AU - Zou, J.

AU - Wang, H.

AU - Auchterlonie, G. J.

AU - Paladugu, M.

AU - Gao, Y. N.

AU - Kim, Y.

AU - Joyce, H. J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2006

Y1 - 2006

N2 - During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, we have determined the growth mechanism of truncated triangular GaAs nanowires.

AB - During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, we have determined the growth mechanism of truncated triangular GaAs nanowires.

KW - GaAs

KW - Lateral growth

KW - Metalorganic chemical vapor deposition

KW - Nanowire

KW - SEM

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=48749120337&partnerID=8YFLogxK

U2 - 10.1109/ICONN.2006.340690

DO - 10.1109/ICONN.2006.340690

M3 - Conference contribution

SN - 1424404533

SN - 9781424404537

T3 - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

SP - 604

EP - 605

BT - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

T2 - 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006

Y2 - 3 July 2006 through 6 July 2006

ER -

Growth mechanism of truncated triangular GaAs nanowires

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