Growth mechanism of truncated triangular III-V nanowires

Jin Zou; Mohanchand Paladugu; Hui Wang; Graeme J. Auchterlonie; Ya Nan Guo; Yong Kim; Qiang Gao; Hannah J. Joyce; H. Hoe Tan; Chennupati Jagadish

doi:10.1002/smll.200600503

Growth mechanism of truncated triangular III-V nanowires

Jin Zou^*, Mohanchand Paladugu, Hui Wang, Graeme J. Auchterlonie, Ya Nan Guo, Yong Kim, Qiang Gao, Hannah J. Joyce, H. Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemical vapor deposition (MOCVD) technique was analyzed. The single-crystalline wafers with deposited Au nanoparticles were placed in a growth chamber and the nanowire growth was initiated by the flow of vapor reactants at the growth temperature. GaAs nanowires were grown on a (111)B GaAs substrates in a horizontal-flow MOCVD reactor at a pressure of 100 mbar. The MOCVD results show that the size of the truncated triangular GaAs is larger than the hexagon in the top region of the nanowire indicating the lateral growth of (112) surfaces. The results also show that the type II positions on the (112) surface are the preferred lattice site of Ga atoms. The results also show that the hexagonal-shaped sidewalls are (112) atomic planes belong to (112)A and (112)B surfaces in the zinc blende structures.

Original language	English
Pages (from-to)	389-393
Number of pages	5
Journal	Small
Volume	3
Issue number	3
DOIs	https://doi.org/10.1002/smll.200600503
Publication status	Published - Mar 2007

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10.1002/smll.200600503

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@article{88a244f66a0d4c8b9484f09beca75d8c,

title = "Growth mechanism of truncated triangular III-V nanowires",

abstract = "The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemical vapor deposition (MOCVD) technique was analyzed. The single-crystalline wafers with deposited Au nanoparticles were placed in a growth chamber and the nanowire growth was initiated by the flow of vapor reactants at the growth temperature. GaAs nanowires were grown on a (111)B GaAs substrates in a horizontal-flow MOCVD reactor at a pressure of 100 mbar. The MOCVD results show that the size of the truncated triangular GaAs is larger than the hexagon in the top region of the nanowire indicating the lateral growth of (112) surfaces. The results also show that the type II positions on the (112) surface are the preferred lattice site of Ga atoms. The results also show that the hexagonal-shaped sidewalls are (112) atomic planes belong to (112)A and (112)B surfaces in the zinc blende structures.",

keywords = "Electron microscopy, Indium, Materials science, Nanowires, Semiconductors",

author = "Jin Zou and Mohanchand Paladugu and Hui Wang and Auchterlonie, {Graeme J.} and Guo, {Ya Nan} and Yong Kim and Qiang Gao and Joyce, {Hannah J.} and Tan, {H. Hoe} and Chennupati Jagadish",

year = "2007",

month = mar,

doi = "10.1002/smll.200600503",

language = "English",

volume = "3",

pages = "389--393",

journal = "Small",

issn = "1613-6810",

publisher = "Wiley-VCH Verlag GmbH",

number = "3",

}

TY - JOUR

T1 - Growth mechanism of truncated triangular III-V nanowires

AU - Zou, Jin

AU - Paladugu, Mohanchand

AU - Wang, Hui

AU - Auchterlonie, Graeme J.

AU - Guo, Ya Nan

AU - Kim, Yong

AU - Gao, Qiang

AU - Joyce, Hannah J.

AU - Tan, H. Hoe

AU - Jagadish, Chennupati

PY - 2007/3

Y1 - 2007/3

N2 - The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemical vapor deposition (MOCVD) technique was analyzed. The single-crystalline wafers with deposited Au nanoparticles were placed in a growth chamber and the nanowire growth was initiated by the flow of vapor reactants at the growth temperature. GaAs nanowires were grown on a (111)B GaAs substrates in a horizontal-flow MOCVD reactor at a pressure of 100 mbar. The MOCVD results show that the size of the truncated triangular GaAs is larger than the hexagon in the top region of the nanowire indicating the lateral growth of (112) surfaces. The results also show that the type II positions on the (112) surface are the preferred lattice site of Ga atoms. The results also show that the hexagonal-shaped sidewalls are (112) atomic planes belong to (112)A and (112)B surfaces in the zinc blende structures.

AB - The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemical vapor deposition (MOCVD) technique was analyzed. The single-crystalline wafers with deposited Au nanoparticles were placed in a growth chamber and the nanowire growth was initiated by the flow of vapor reactants at the growth temperature. GaAs nanowires were grown on a (111)B GaAs substrates in a horizontal-flow MOCVD reactor at a pressure of 100 mbar. The MOCVD results show that the size of the truncated triangular GaAs is larger than the hexagon in the top region of the nanowire indicating the lateral growth of (112) surfaces. The results also show that the type II positions on the (112) surface are the preferred lattice site of Ga atoms. The results also show that the hexagonal-shaped sidewalls are (112) atomic planes belong to (112)A and (112)B surfaces in the zinc blende structures.

KW - Electron microscopy

KW - Indium

KW - Materials science

KW - Nanowires

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=33947268510&partnerID=8YFLogxK

U2 - 10.1002/smll.200600503

DO - 10.1002/smll.200600503

M3 - Article

SN - 1613-6810

VL - 3

SP - 389

EP - 393

JO - Small

JF - Small

IS - 3

ER -

Growth mechanism of truncated triangular III-V nanowires

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