Growth of c-axis oriented GaN films on quartz by pulsed laser deposition

Rong Ping Wang; Hachizo Muto; Takeshi Kusumori

doi:10.1016/S0925-3467(03)00052-1

Growth of c-axis oriented GaN films on quartz by pulsed laser deposition

Rong Ping Wang, Hachizo Muto^*, Takeshi Kusumori

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

12 Citations (Scopus)

Abstract

We have successfully fabricated highly oriented GaN films on ZnO-buffered quartz by Nd:YAG pulsed laser deposition to develop large area and low cost optoelectronic devices. The quality of the films was investigated as functions of deposition temperature and ambient pressure by means of X-ray diffraction, scanning electron microscopy, infrared reflectance and optical transmission spectroscopy. It was found that c-axis oriented GaN films could be grown on ZnO-buffered quartz substrates at temperatures from 300 to 800 °C and inactivated N₂ flow from 10^-3 to 2.0 Torr. The crystallinity, surface morphology and optical transmittance of the films could be improved with increasing deposition temperature and were optimized at 800 °C. A reststrahlen band was observed at 568 cm^-1, confirming that GaN was indeed overlaid on ZnO-buffered quartz. The present GaN/ZnO bilayer structure has showed optical transmittance of about 60%.

Original language	English
Pages (from-to)	15-20
Number of pages	6
Journal	Optical Materials
Volume	23
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-3467(03)00052-1
Publication status	Published - 2003
Externally published	Yes
Event	Proceedings of the 8th ICEM 2002 - XI'an, China Duration: 10 Jun 2002 → 14 Jun 2002

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10.1016/S0925-3467(03)00052-1

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title = "Growth of c-axis oriented GaN films on quartz by pulsed laser deposition",

abstract = "We have successfully fabricated highly oriented GaN films on ZnO-buffered quartz by Nd:YAG pulsed laser deposition to develop large area and low cost optoelectronic devices. The quality of the films was investigated as functions of deposition temperature and ambient pressure by means of X-ray diffraction, scanning electron microscopy, infrared reflectance and optical transmission spectroscopy. It was found that c-axis oriented GaN films could be grown on ZnO-buffered quartz substrates at temperatures from 300 to 800 °C and inactivated N2 flow from 10-3 to 2.0 Torr. The crystallinity, surface morphology and optical transmittance of the films could be improved with increasing deposition temperature and were optimized at 800 °C. A reststrahlen band was observed at 568 cm-1, confirming that GaN was indeed overlaid on ZnO-buffered quartz. The present GaN/ZnO bilayer structure has showed optical transmittance of about 60%.",

keywords = "GaN film, Laser ablation, Quartz, ZnO buffer layer",

author = "Wang, {Rong Ping} and Hachizo Muto and Takeshi Kusumori",

year = "2003",

doi = "10.1016/S0925-3467(03)00052-1",

language = "English",

volume = "23",

pages = "15--20",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

number = "1-2",

note = "Proceedings of the 8th ICEM 2002 ; Conference date: 10-06-2002 Through 14-06-2002",

}

TY - JOUR

T1 - Growth of c-axis oriented GaN films on quartz by pulsed laser deposition

AU - Wang, Rong Ping

AU - Muto, Hachizo

AU - Kusumori, Takeshi

PY - 2003

Y1 - 2003

N2 - We have successfully fabricated highly oriented GaN films on ZnO-buffered quartz by Nd:YAG pulsed laser deposition to develop large area and low cost optoelectronic devices. The quality of the films was investigated as functions of deposition temperature and ambient pressure by means of X-ray diffraction, scanning electron microscopy, infrared reflectance and optical transmission spectroscopy. It was found that c-axis oriented GaN films could be grown on ZnO-buffered quartz substrates at temperatures from 300 to 800 °C and inactivated N2 flow from 10-3 to 2.0 Torr. The crystallinity, surface morphology and optical transmittance of the films could be improved with increasing deposition temperature and were optimized at 800 °C. A reststrahlen band was observed at 568 cm-1, confirming that GaN was indeed overlaid on ZnO-buffered quartz. The present GaN/ZnO bilayer structure has showed optical transmittance of about 60%.

AB - We have successfully fabricated highly oriented GaN films on ZnO-buffered quartz by Nd:YAG pulsed laser deposition to develop large area and low cost optoelectronic devices. The quality of the films was investigated as functions of deposition temperature and ambient pressure by means of X-ray diffraction, scanning electron microscopy, infrared reflectance and optical transmission spectroscopy. It was found that c-axis oriented GaN films could be grown on ZnO-buffered quartz substrates at temperatures from 300 to 800 °C and inactivated N2 flow from 10-3 to 2.0 Torr. The crystallinity, surface morphology and optical transmittance of the films could be improved with increasing deposition temperature and were optimized at 800 °C. A reststrahlen band was observed at 568 cm-1, confirming that GaN was indeed overlaid on ZnO-buffered quartz. The present GaN/ZnO bilayer structure has showed optical transmittance of about 60%.

KW - GaN film

KW - Laser ablation

KW - Quartz

KW - ZnO buffer layer

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U2 - 10.1016/S0925-3467(03)00052-1

DO - 10.1016/S0925-3467(03)00052-1

M3 - Conference article

SN - 0925-3467

VL - 23

SP - 15

EP - 20

JO - Optical Materials

JF - Optical Materials

IS - 1-2

T2 - Proceedings of the 8th ICEM 2002

Y2 - 10 June 2002 through 14 June 2002

ER -

Growth of c-axis oriented GaN films on quartz by pulsed laser deposition

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