Growth of defect-free InAs nanowires using Pd catalyst

H. Y. Xu; Y. N. Guo; Z. M. Liao; J. Zou; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472345

Growth of defect-free InAs nanowires using Pd catalyst

H. Y. Xu, Y. N. Guo, Z. M. Liao, J. Zou^*, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

To explore the growth mechanism and the effect of non-gold catalysts in growing III-V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four 111 side-facets. The common nanowire/catalyst interface is found to be the unusual 113 planes of the nanowires.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	31-32
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472345
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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Xu, H. Y., Guo, Y. N., Liao, Z. M., Zou, J., Gao, Q., Tan, H. H., & Jagadish, C. (2012). Growth of defect-free InAs nanowires using Pd catalyst. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 31-32). Article 6472345 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472345

@inproceedings{f37d5423da7a41bba332854043f9017e,

title = "Growth of defect-free InAs nanowires using Pd catalyst",

abstract = "To explore the growth mechanism and the effect of non-gold catalysts in growing III-V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four 111 side-facets. The common nanowire/catalyst interface is found to be the unusual 113 planes of the nanowires.",

author = "Xu, {H. Y.} and Guo, {Y. N.} and Liao, {Z. M.} and J. Zou and Q. Gao and Tan, {H. H.} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472345",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "31--32",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Xu, HY, Guo, YN, Liao, ZM, Zou, J, Gao, Q, Tan, HH & Jagadish, C 2012, Growth of defect-free InAs nanowires using Pd catalyst. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472345, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 31-32, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472345

Growth of defect-free InAs nanowires using Pd catalyst. / Xu, H. Y.; Guo, Y. N.; Liao, Z. M. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 31-32 6472345 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth of defect-free InAs nanowires using Pd catalyst

AU - Xu, H. Y.

AU - Guo, Y. N.

AU - Liao, Z. M.

AU - Zou, J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2012

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N2 - To explore the growth mechanism and the effect of non-gold catalysts in growing III-V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four 111 side-facets. The common nanowire/catalyst interface is found to be the unusual 113 planes of the nanowires.

AB - To explore the growth mechanism and the effect of non-gold catalysts in growing III-V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four 111 side-facets. The common nanowire/catalyst interface is found to be the unusual 113 planes of the nanowires.

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U2 - 10.1109/COMMAD.2012.6472345

DO - 10.1109/COMMAD.2012.6472345

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 31

EP - 32

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Growth of defect-free InAs nanowires using Pd catalyst

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